Phys. Rev. A 53, 2799 - 2803 (1996)Measurement of spontaneous-emission enhancement near the one-dimensional photonic band edge of semiconductor heterostructures |
PRL Celebrates 50 Years
This Week's Milestone Letters are from 1973: |
Michael D. Tocci and Michael Scalora
Department of Physics and Department of Electrical Engineering, University of Alabama in Huntsville, Huntsville, Alabama 35899
Mark J. Bloemer, Jonathan P. Dowling, and Charles M. Bowden
Weapons Sciences Directorate, AMSMI-RD-WS, U. S. Army Missile Command, Redstone Arsenal, Alabama 35898-5248
Received 6 April 1995
We present results of an experimental investigation into alteration of the spontaneous emission spectrum of GaAs from within one-dimensional photonic band gap (PBG) structures. The PBG samples are multilayer AlAs/Al0.2Ga0.8As/GaAs p-i-n light-emitting diodes, with layers arranged as a distributed Bragg reflector. The emission spectra normal to the layers are measured, and we use a simple method to model the power spectrum of spontaneous emission from within the structures. We find that the emitted power is enhanced by a factor of 3.5 at the frequencies near the photonic band edge. © 1996 The American Physical Society.
©1996 The American Physical Society
URL: http://link.aps.org/abstract/PRA/v53/p2799
DOI: 10.1103/PhysRevA.53.2799
PACS: 42.50.Lc, 42.60.Lh, 78.66.Fd, 41.20.Jb
[ Abstract | Previous article | Next article | Issue 4 ]
About PROLA | Terms and Conditions | Subscriptions | Search | Help
Content in PROLA © 2008 by The American Physical Society All rights reserved. PROLA™ is a trademark of The American Physical Society. Use of APS online journals implies that the user has read and agrees to the Terms and Conditions in the Subscription Agreement.