Phys. Rev. A 56, 3714 - 3718 (1997)

Absolute cross sections for near-threshold electron-impact excitation of the 3s2 1S→3s3p 1P and 3s2 1S→3s3p 3P transitions in Si2+

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B. Wallbank, N. Djurić, O. Woitke, S. Zhou, and G. H. Dunn
JILA, University of Colorado and National Institute of Standards and Technology, Boulder, Colorado 80309-0440

A. C. H. Smith
University College London, London WC1E 6BT, United Kingdom

M. E. Bannister
Physics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6372

Received 4 June 1997

Absolute total cross sections for electron-impact excitation of the 3s2 1S→3s3p 3P and 3s2 1S→3s3p 1P transitions in Si2+ were measured using the merged electron-ion beams energy-loss technique. The results are compared to R-matrix close-coupling theory, which predicts a strong resonance enhancement of the cross section near the threshold for excitation of the 3P state and this is confirmed by the experiments. The observed disagreement between theory and experiment for the dipole excitation is suggested to be due to resonance interference.


©1997 The American Physical Society

URL: http://link.aps.org/doi/10.1103/PhysRevA.56.3714
DOI: 10.1103/PhysRevA.56.3714
PACS: 34.80.Kw

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