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Phys. Rev. A 72, 013815 (2005) [4 pages]

Cavity-solitons switching in semiconductor microcavities

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X. Hachair, L. Furfaro, J. Javaloyes, M. Giudici, S. Balle *, and J. Tredicce
Institut Non-linéaire de Nice, UMR 6618 Centre National de la Recherche Scientifique - Université de Nice Sophia-Antipolis, 06560 Valbonne, France

G. Tissoni and L. A. Lugiato
INFM, Dipartimento di Fisica e Matematica, Università dell’Insubria, Via Valleggio 11, 22100 Como, Italy

M. Brambilla and T. Maggipinto
INFM, Dipartimento di Fisica Interateneo, Università e Politecnico di Bari, Via Orabona 4, 70126 Bari, Italy

Received 13 December 2004; published 18 July 2005

Cavity solitons (CSs) are localized structures appearing as intensity peaks in the homogeneous background of the field emitted by a nonlinear microresonator. We experimentally and theoretically study the switch-on process of cavity solitons in semiconductor amplifiers. The switching time has two contributions: a lethargic lapse following the application of the switching pulse and a characteristic buildup time. While the latter is not significantly affected by the control parameters, the former crucially depends on them. Optimization of the parameters leads to a switch-on time of less than one nanosecond, assessing the CS competitiveness for all-optical applications.


©2005 The American Physical Society

URL: http://link.aps.org/doi/10.1103/PhysRevA.72.013815
DOI: 10.1103/PhysRevA.72.013815
PACS: 42.65.Sf, 42.65.Tg, 42.79.Ta

* On sabbatical leave from Institut Mediterrani d’Estudis Avançats, IMEDEA (CSIC-UIB), C/ Miquel Marqués 21, E-07190 Esporles, Spain.

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