Phys. Rev. B 25, 3608 - 3614 (1982)Phonon scattering at crystal surfaces |
R. O. Pohl * and B. Stritzker
Institut für Festkörperforschung, Kernforschungsanlage, 517 Jülich, Federal Republic of Germany
Received 9 November 1981
Through measurements of the low-temperature (0.06-2.0 K) thermal conductivity of dielectric crystals in the boundary-scattering regime we are searching for causes of diffuse phonon scattering by crystal surfaces. Thin (≤ 100 Å) gold films on polished sapphire surfaces cause diffuse phonon scattering above 0.3 K. Below that temperature, specular reflection again begins to dominate. The same diffuse scattering can be caused by implantation of Xe ions which damage a layer ≃500-Å thick underneath the sapphire surface. For gold films, the effect diminishes with increasing thickness, i.e., greater perfection of the film. Because of the very small thickness of the layers in which the diffuse scattering occurs the phonon-scattering strength must be very much stronger than any phonon scattering previously observed in the bulk of dielectric crystals. Several potential explanations are discussed. However, none appear to be sufficiently general to account for both kinds of surface treatments.
©1982 The American Physical Society
URL: http://link.aps.org/abstract/PRB/v25/p3608
DOI: 10.1103/PhysRevB.25.3608
* Permanent address: Laboratory of Atomic and Solid State Physics, Department of Physics, Clark Hall, Cornell University, Ithaca, New York 14853.
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