Phys. Rev. B 37, 10795 - 10802 (1988)Polarized spectral emittance from periodic micromachined surfaces. I. Doped silicon: The normal direction |
Peter J. Hesketh and Jay N. Zemel
Department of Electrical Engineering and Center for Sensor Technologies, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6390
Benjamin Gebhart
Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6390
Received 16 February 1988
The normal, polarized spectral (3 μm≤λ≤14 μm) emittances of highly doped, micromachined, periodic structures on heavily phosphorus-doped (110) silicon ([P]∼5×1019 cm-3) were measured for pattern repeat scales, Λ, of 10, 14, 18, and 22 μm and depths ranging from 0.7 to 45 μm. These structures have dimensions that are comparable to the wavelengths of the measured radiation. The s-polarization vector in these measurements was perpendicular to the grating vector. The data demonstrated that the emittance from the deep structures is dominated by standing (quantized) electromagnetic waves in a direction normal to the surface similar to those in an organ pipe. Wood’s singularities were clearly visible in the p-polarized emission on shallow gratings (depth ≤1.5 μm). It is concluded that these measurements, particularly the s-polarized emission from deep gratings, cannot be explained by calculations of electromagnetic singularities on lamellar gratings.
©1988 The American Physical Society
URL: http://link.aps.org/abstract/PRB/v37/p10795
DOI: 10.1103/PhysRevB.37.10795
PACS: 44.40.+a
See Also
Related paper: Peter J. Hesketh, Jay N. Zemel, and Benjamin Gebhart, Polarized spectral emittance from periodic micromachined surfaces. II. Doped silicon: Angular variation, Phys. Rev. B 37, 10803 (1988)
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