Phys. Rev. B 39, 4828 - 4830 (1989)

Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange

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G. Binasch, P. Grünberg, F. Saurenbach, and W. Zinn
Institut für Festkörperforschung, Kernforschungsanlage Jülich G.m.b.H., Postfach 1913, D-5170 Jülich, West Germany

Rapid Communication Free to Read Featured in Phys. Rev. Focus Received 31 May 1988

The electrical resistivity of Fe-Cr-Fe layers with antiferromagnetic interlayer exchange increases when the magnetizations of the Fe layers are aligned antiparallel. The effect is much stronger than the usual anisotropic magnetoresistance and further increases in structures with more than two Fe layers. It can be explained in terms of spin-flip scattering of conduction electrons caused by the antiparallel alignment of the magnetization.


©1989 The American Physical Society

URL: http://link.aps.org/doi/10.1103/PhysRevB.39.4828
DOI: 10.1103/PhysRevB.39.4828
PACS: 75.70.-i, 72.15.Gd

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