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Phys. Rev. B 52, 13761 - 13764 (1995)

Self-oscillations of domains in doped GaAs-AlAs superlattices

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J. Kastrup, R. Klann, H. T. Grahn, and K. Ploog
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany

L. L. Bonilla, J. Galán, M. Kindelan, and M. Moscoso
Escuela Politécnica Superior, Universidad Carlos III de Madrid, Butarque 15, E-28911 Leganés, Spain

R. Merlin
The Harrison M. Randall Laboratory of Physics, The University of Michigan, Ann Arbor, Michigan 48109-1120

Received 31 May 1995

Self-sustained oscillations of the current have been observed and simulated in a doped GaAs-AlAs superlattice under voltage control. Depending on the applied bias the detected frequencies vary betwen 250 kHz at low voltages and 20 MHz at high voltages. Amplitude and frequency decrease with increasing carrier density until, at very high excitation densities, stable electric-field domains are formed. A discrete drift model reproduces the current oscillations and shows that they can be attributed to the spatial oscillation of the boundary between the two domains.


©1995 The American Physical Society

URL: http://link.aps.org/doi/10.1103/PhysRevB.52.13761
DOI: 10.1103/PhysRevB.52.13761
PACS: 72.20.Ht, 73.40.Gk, 73.61.Ey

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