Phys. Rev. B 52, R8654 - R8657 (1995)

Optically detected far-infrared resonances in doped GaAs quantum wells

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J. Kono, S. T. Lee, M. S. Salib, G. S. Herold, A. Petrou, and B. D. McCombe
Department of Physics, State University of New York at Buffalo, Buffalo, New York 14260

Rapid Communication Received 19 April 1995

We have observed a variety of far-infrared resonances, including the transition from the ground state to the first excited state in neutral donors, and singlet and triplet transitions of negative donor ions (D-), as well as electron-cyclotron resonance, in well-center-doped GaAs quantum wells, employing a recently developed optical detection technique. The power of this technique for studying impurity states in confined systems is clearly revealed. Results provide evidence for the existence of D- centers under optical excitation in multiple-quantum-well structures doped only in the wells.


©1995 The American Physical Society

URL: http://link.aps.org/abstract/PRB/v52/pR8654
DOI: 10.1103/PhysRevB.52.R8654
PACS: 72.10.Bg, 71.55.Jv

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