Phys. Rev. B 53, R7607 - R7609 (1996)Optical second-harmonic electroreflectance spectroscopy of a Si(001) metal-oxide-semiconductor structure |
J. I. Dadap, X. F. Hu, M. H. Anderson, and M. C. Downer
Department of Physics, The University of Texas at Austin, Austin, Texas 78712
J. K. Lowell
Advanced Micro Devices, 5204 East Ben White, Austin, Texas 78741
O. A. Aktsipetrov
Physics Department, Moscow State University, Moscow 119899, Russia
Received 27 November 1995
We report the dependence of the second-harmonic spectrum of Si(001) metal-oxide-semiconductor structures on applied bias in the vicinity of the direct two-photon E1 transition. Bulk nonlinear electroreflectance contributions peak at 3.37 eV; the surface dipole contribution peaks at 3.26 eV.
©1996 The American Physical Society
URL: http://link.aps.org/abstract/PRB/v53/pR7607
DOI: 10.1103/PhysRevB.53.R7607
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