Phys. Rev. B 53, R7607 - R7609 (1996)

Optical second-harmonic electroreflectance spectroscopy of a Si(001) metal-oxide-semiconductor structure

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J. I. Dadap, X. F. Hu, M. H. Anderson, and M. C. Downer
Department of Physics, The University of Texas at Austin, Austin, Texas 78712

J. K. Lowell
Advanced Micro Devices, 5204 East Ben White, Austin, Texas 78741

O. A. Aktsipetrov
Physics Department, Moscow State University, Moscow 119899, Russia

Rapid Communication Received 27 November 1995

We report the dependence of the second-harmonic spectrum of Si(001) metal-oxide-semiconductor structures on applied bias in the vicinity of the direct two-photon E₁ transition. Bulk nonlinear electroreflectance contributions peak at 3.37 eV; the surface dipole contribution peaks at 3.26 eV.

URL: http://link.aps.org/abstract/PRB/v53/pR7607
DOI: 10.1103/PhysRevB.53.R7607

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Phys. Rev. B 53, R7607 - R7609 (1996)

Optical second-harmonic electroreflectance spectroscopy of a Si(001) metal-oxide-semiconductor structure

PRL Celebrates 50 Years