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Phys. Rev. B 55, 4035 - 4038 (1997)

Evidence for muonium passivation in n-doped Ge

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R. Kadono and R. M. Macrae
The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan

K. Nishiyama
Meson Science Laboratory, Faculty of Science, University of Tokyo, Tokyo 113, Japan

K. Nagamine
The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan
and Meson Science Laboratory, Faculty of Science, University of Tokyo, Tokyo 113, Japan

Received 28 October 1996

Two different diamagnetic muon states have been identified through their response to bulk electronic excitation in crystalline n-type Ge: one, found above ∼100 K, rapidly charge exchanges with photogenerated carriers, while the other, seen at low temperatures, shows little or no such behavior. The electronic inactivity of the latter state (Mu-, produced by a slow charge-transfer reaction between muonium and an impurity donor atom) further suggests that the electronic level is located outside the energy-band gap, equivalent to ``muonium passivation'' of the donor.


©1997 The American Physical Society

URL: http://link.aps.org/abstract/PRB/v55/p4035
DOI: 10.1103/PhysRevB.55.4035
PACS: 66.30.Jt, 61.72.Vv, 61.72.Yx, 76.75.+i

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