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Phys. Rev. B 55, R4899 - R4902 (1997)

Spectromicroscopic evidence of Ge-GaSe chemical reactions: Not a Schottky system

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J. Almeida, I. Vobornik, and H. Berger
Institut de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Ecublens, Lausanne, Switzerland

M. Kiskinova, A. Kolmakov, and M. Marsi
Sincrotrone di Trieste SpA, 34012 Trieste, Italy

G. Margaritondo
Institut de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Ecublens, Lausanne, Switzerland
and Sincrotrone di Trieste SpA, 34012 Trieste, Italy

Rapid Communication Received 24 October 1996

Photoelectron-spectromicroscopy experiments unexpectedly revealed a reacted phase for Ge overlayers on GaSe. This finding is in sharp contrast with the notion that this interface is an ideal Schottky system, whose band discontinuities, for example, are determined by the Anderson rule—and with the widespread belief that most III-VI-based interfaces behave like Schottky systems. After this result, to the best of our knowledge, no heterojunction is known that matches the requisites of an ideal Schottky system.


©1997 The American Physical Society

URL: http://link.aps.org/abstract/PRB/v55/pR4899
DOI: 10.1103/PhysRevB.55.R4899
PACS: 73.40.Lq, 61.16.-d, 79.60.-i

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