APS » PROLA » Phys. Rev. B » Volume 56 » Issue 11

Phys. Rev. B 56, 6404 - 6407 (1997)

Local vibrational modes in GaAs under hydrostatic pressure

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M. D. McCluskey and E. E. Haller
Lawrence Berkeley National Laboratory and University of California at Berkeley, Berkeley, California 94720

J. Walker and N. M. Johnson
Xerox Palo Alto Research Center, Palo Alto, California 94304

J. Vetterhöffer and J. Weber
Max-Planck-Institut für Festkörperforschung, Postfach 80 06 05, D-70506, Stuttgart, Germany

T. B. Joyce
Department of Materials Science and Engineering, P.O. Box 147, Liverpool University, Liverpool L69 3BX, United Kingdom

R. C. Newman
Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology, and Medicine, London SW7 2BZ, United Kingdom

Received 3 March 1997

Using infrared spectroscopy, we have observed local vibrational modes (LVM’s) in GaAs at hydrostatic pressures as high as 7 GPa at liquid-helium temperatures. The shift of the infrared-active v3vibrational mode of CO2 impurities in the N2 pressure medium was used as an in situ pressure calibration. We find that LVM’s arising from 12CAs and 13CAs substitutional impurities vary linearly with pressure. The shifts of the 12CAs-H and 13CAs-H stretch modes have positive curvatures, while the pressure-dependent shift of the S-H stretch mode has a negative curvature.


©1997 The American Physical Society

URL: http://link.aps.org/abstract/PRB/v56/p6404
DOI: 10.1103/PhysRevB.56.6404
PACS: 71.55.Eq, 63.20.Pw, 78.30.Fs

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