Phys. Rev. B 56, 9239 - 9242 (1997)

Local modulation of the quantum-well quasicontinuum states using charged-carrier transfer induced by intersubband transitions

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M. Bendayan
Solid State Institute and Physics Department, Technion, Israel Institute of Technology, Haifa 32000, Israel

R. Kapon
Division of Applied Physics, The Fredi and Nadine Herrmann School of Applied Science, The Hebrew University of Jerusalem, Jerusalem 91904, Israel

R. Beserman
Solid State Institute and Physics Department, Technion, Israel Institute of Technology, Haifa 32000, Israel

A. Sa’ar
Division of Applied Physics, The Fredi and Nadine Herrmann School of Applied Science, The Hebrew University of Jerusalem, Jerusalem 91904, Israel

R. Planel
Laboratoire de Microstructures et Microelectronique, CNET, 196 Avenue Henri Ravera, Boi⁁te Postale 107, 92225 Bagneux, France

Received 22 May 1997

By generating a local electric field across an asymmetrical coupled quantum-well structure and using resonant Raman spectroscopy as a probe, we were able to resolve two classes of continuum electronic states of energies close to the barrier height. The first class is related to a continuum resonant state that is located near the edge of the barrier and is extended across the barrier region but not across the coupled quantum wells. The second class of continuum states is related to a quasibound resonant state that is localized above the quantum wells. Therefore, a local electric field across the coupled quantum wells modifies the energy spectrum of the localized resonant state while keeping the delocalized resonance unaffected. In our experiment the local electric field was generated by intersubband photoexcitation of carriers from one quantum well to the other. We observed a redshift of the quasibound resonant state due to the intersubband photoexcitation.


©1997 The American Physical Society

URL: http://link.aps.org/abstract/PRB/v56/p9239
DOI: 10.1103/PhysRevB.56.9239
PACS: 73.20.Dx, 78.30.-j

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