Phys. Rev. B 57, 6294 - 6296 (1998)Real-time measurements of Si 2p core level during dry oxidation of Si(100) |
Y. Enta, Y. Miyanishi, H. Irimachi, M. Niwano, and, and M. Suemitsu
Research Institute of Electrical Communication, Tohoku University, Sendai 98077, Japan
N. Miyamoto
Faculty of Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985, Japan
E. Shigemasa and H. Kato
Photon Factory, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305, Japan
Received 8 September 1997
The chemically shifted Si 2p core level (Si4+) has been measured in real time during initial thermal oxidation of Si(100) by O2 gas. The time evolutions of the Si4+ intensities showed identical behaviors to those of O 2p intensities reported previously [Y. Enta et al., Appl. Surf. Sci. 100/101, 449 (1996)], demonstrating that there exist two growth modes for the oxidation: the first-order Langmuir-type adsorption mode and two-dimensional island growth mode at oxidation temperatures below and above 650 °C, respectively.
©1998 The American Physical Society
URL: http://link.aps.org/abstract/PRB/v57/p6294
DOI: 10.1103/PhysRevB.57.6294
PACS: 73.40.Qv, 68.45.Da, 79.60.-i
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