Phys. Rev. B 61, R10606 - R10608 (2000)

Chemical doping of individual semiconducting carbon-nanotube ropes

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Marc Bockrath, J. Hone, A. Zettl, and Paul L. McEuen
Department of Physics, University of California, Berkeley, California 94720
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720

Andrew G. Rinzler and Richard E. Smalley
Center for Nanoscale Science and Technology, Rice Quantum Institute,
Department of Chemistry and Physics, MS-100, Rice University, P.O. Box 1892, Houston, Texas 77251

Rapid Communication Received 1 November 1999

We report the effects of potassium doping on the conductance of individual semiconducting single-walled carbon nanotube ropes. We are able to control the level of doping by reversibly intercalating and de-intercalating potassium. Potassium doping changes the carriers in the ropes from holes to electrons. Typical values for the carrier density are found to be ∼100–1000 electrons/μm. The effective mobility for the electrons is μeff∼20–60 cm2 V-1 s-1, a value similar to that reported for the hole effective mobility in nanotubes [R. Martel et al., Appl. Phys. Lett. 73, 2447 (1998)].


©2000 The American Physical Society

URL: http://link.aps.org/abstract/PRB/v61/pR10606
DOI: 10.1103/PhysRevB.61.R10606
PACS: 73.50.-h, 73.61.Wp

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