APS » PROLA » Phys. Rev. B » Volume 64 » Issue 19

Phys. Rev. B 64, 193309 (2001) [4 pages]

Role of doped layers in the dephasing of two-dimensional electrons in quantum-well structures

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G. M. Minkov *, A. V. Germanenko, O. E. Rut, and A. A. Sherstobitov
Institute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russia

B. N. Zvonkov, E. A. Uskova, and A. A. Birukov
Physical-Technical Research Institute, University of Nizhni Novgorod, 603600 Nizhni Novgorod, Russia

Received 6 June 2001; revised 15 August 2001; published 19 October 2001

The temperature and gate voltage dependences of the phase breaking time are studied experimentally in GaAs/InGaAs heterostructures with a single quantum well. It is shown that appearance of states at the Fermi energy in the doped layers leads to a significant decrease of the phase breaking time of the carriers in the quantum well and to saturation of the phase breaking time at low temperature.


©2001 The American Physical Society

URL: http://link.aps.org/abstract/PRB/v64/e193309
DOI: 10.1103/PhysRevB.64.193309
PACS: 73.20.Fz, 73.61.Ey

* Grigori.Minkov@usu.ru

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