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Phys. Rev. B 64, 241308 (2001) [4 pages]

Significant strain dependence of piezoelectric constants in InxGa1-xN/GaN quantum wells

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G. Vaschenko, D. Patel, and C. S. Menoni
Department of Electrical and Computer Engineering, Colorado State University, Fort Collins, Colorado 80523-1373

N. F. Gardner, J. Sun, and W. Götz
LumiLeds Lighting, 370 W. Trimble Road, San Jose, California 95131

C. N. Tomé and B. Clausen
MST Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545

Rapid Communication Received 5 June 2001; revised 17 October 2001; published 10 December 2001

Using hydrostatic pressure to modify the strain in InxGa1-xN/GaN quantum wells we show an almost twofold increase of the built-in piezoelectric field in the wells from 1.4 MV/cm at atmospheric pressure to 2.6 MV/cm at 8.7 GPa. An analysis in terms of the total strain generated by the pressure suggests that the increase in the field arises from a significant dependence of the piezoelectric constants on strain.


©2001 The American Physical Society

URL: http://link.aps.org/abstract/PRB/v64/e241308
DOI: 10.1103/PhysRevB.64.241308
PACS: 77.65.Ly, 77.65.Bn, 78.66.Fd, 62.50.+p

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