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Phys. Rev. B 64, 041307 (2001) [4 pages]

Gate-controlled electron spin resonance in GaAs/AlxGa1-xAs heterostructures

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H. W. Jiang
Department of Physics and Astronomy, University of California at Los Angeles, Los Angeles, California 90095

Eli Yablonovitch
Department of Electrical Engineering, University of California, Los Angeles, California 90095-1594

Rapid Communication Received 2 May 2001; published 3 July 2001

The electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be tuned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that electron g factor is being electrostatically controlled by shifting the equilibrium position of the electron wave function from one epitaxial layer to another with different g factors.


©2001 The American Physical Society

URL: http://link.aps.org/abstract/PRB/v64/e041307
DOI: 10.1103/PhysRevB.64.041307
PACS: 76.30.-v, 03.67.Lx, 73.43.Qt

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