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Phys. Rev. B 64, 041308 (2001) [4 pages]

Statistics of the domain-boundary relocation time in semiconductor superlattices

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M. Rogozia1, S.W. Teitsworth2 *, H.T. Grahn1, and K.H. Ploog1
1Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
2Department of Physics, Duke University, Box 90305, Durham, North Carolina 27708-0305

Rapid Communication Received 27 March 2001; published 3 July 2001

Static domain formation in doped semiconductor superlattices results in several current branches separated by abrupt discontinuities that exhibit hysteresis. The transition from one branch to its adjacent one is studied by time-resolved switching experiments. The mean value of the relocation time increases by more than one order of magnitude, when the final voltage on the adjacent branch is reduced to a value approaching the discontinuity. At the same time, the distribution function of the relocation time changes from a simple Gaussian to a first-passage time form.


©2001 The American Physical Society

URL: http://link.aps.org/abstract/PRB/v64/e041308
DOI: 10.1103/PhysRevB.64.041308
PACS: 73.50.Fq, 73.40.Gk, 73.61.Ey

* Electronic address: teitso@phy.duke.edu

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