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Phys. Rev. B 64, 041401 (2001) [4 pages]

Diameter dependence of the Raman D-band in isolated single-wall carbon nanotubes

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M. A. Pimenta1, A. Jorio2, S. D. M. Brown2, A. G. Souza Filho2,3, G. Dresselhaus4, J. H. Hafner5, C. M. Lieber5, R. Saito6, and M. S. Dresselhaus2,7
1Departmento de Física, Universidade Federal de Minas Gerais, CP 702, 30123-970 Belo Horizonte, Brazil
2Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307
3Departamento de Física, Universidade Federal do Ceará, Fortaleza-CE, 60455-760 Brazil
4Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307
5Department of Chemistry, Harvard University, Cambridge, Massachusetts 02138
6Department of Electronic Engineering, University of Electro-Communications, Tokyo 182-8585, Japan
7Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307

Rapid Communication Received 23 February 2001; published 21 June 2001

Raman D-band spectra are reported for several different SWNTs using two different laser energies (Elaser=1.58 and 2.41 eV). At a fixed Elaser, individual isolated SWNTs exhibit different diameter-dependent D-band frequencies ωD around an average value. For both semiconducting and metallic tubes, ωD decreases with decreasing nanotube diameter, though ωD for isolated metallic SWNTs is higher than for isolated semiconducting SWNTs. The average D-band frequency depends linearly on Elaser, as previously observed for SWNT bundles, suggesting that the D-band in SWNTs is activated by defects or by the finite size of the SWNTs.


©2001 The American Physical Society

URL: http://link.aps.org/abstract/PRB/v64/e041401
DOI: 10.1103/PhysRevB.64.041401
PACS: 78.67.Ch, 78.30.-j

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