APS » PROLA » Phys. Rev. B » Volume 65 » Issue 16

Phys. Rev. B 65, 161306 (2002) [4 pages]

Spin splitting in modulation-doped AlxGa1-xN/GaN heterostructures
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Ikai Lo, J. K. Tsai, W. J. Yao, P. C. Ho, Li-Wei Tu, and T. C. Chang
Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan 80424, Republic of China

S. Elhamri * and W. C. Mitchel
Air Force Research Laboratory, MLPS, Wright-Patterson Air Force Base, Dayton, Ohio 45433

K. Y. Hsieh, J. H. Huang, and H. L. Huang
Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China

Wen-Chung Tsai
Advanced Epitaxy Technology Inc., 119 Kuangfu N. Road, Hsinchu Industrial Park, Taiwan, Republic of China

Rapid Communication Received 10 December 2001; published 15 April 2002

We have studied the electronic properties of AlxGa1-xN/GaN heterostructures by using Shubnikov–de Haas (SdH) measurement. Two SdH oscillations were detected on the samples of x=0.35 and 0.31, due to the population of the first two subbands with the energy separations of 128 and 109 meV, respectively. For the sample of x=0.25, two SdH oscillations beat each other, probably due to a finite zero-field spin splitting. The spin-splitting energy is equal to 9.0 meV. The samples also showed a persistent photoconductivity effect after illuminating by blue light-emitting diode.


©2002 The American Physical Society

URL: http://link.aps.org/abstract/PRB/v65/e161306
DOI: 10.1103/PhysRevB.65.161306
PACS: 73.21.-b, 71.18.+y, 72.20.Fr, 71.70.Ch

* Permanent address: Department of Physics, University of Dayton, 300 College Park, Dayton, Ohio 45469-0178.

See Also

Comment: Ikai Lo, J. K. Tsai, W. J. Yao, P. C. Ho, Li-Wei Tu, T. C. Chang, S. Elhamri, W. C. Mitchel, K. Y. Hsieh, J. H. Huang, H. L. Huang, and Wen-Chung Tsai, Reply to “Comment on ‘Spin splitting in modulation-doped AlxGa1−xN∕GaN heterostructures’ ”, Phys. Rev. B 73, 037302 (2006)

Comment: N. Tang, B. Shen, M. J. Wang, Z. J. Yang, K. Xu, G. Y. Zhang, D. J. Chen, Y. Xia, Y. Shi, R. Zhang, and Y. D. Zheng, Comment on “Spin splitting in modulation-doped AlxGa1−xN∕GaN heterostructures”, Phys. Rev. B 73, 037301 (2006)

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