Phys. Rev. B 65, 075415 (2002) [6 pages]Electronic and crystalline structure of epitaxial EuNix films grown on Ni(111) |
S. Wieling, S. L. Molodtsov *, and C. Laubschat
Institut für Oberflächenphysik und Mikrostrukturphysik, TU Dresden, D-01062 Dresden, Germany
G. Behr
Institut für Festkörper-und Werkstofforschung (IFW) Dresden, D-01171 Dresden, Germany
Received 13 July 2001; published 31 January 2002
We report on an angle-resolved and resonant photoemission study of ordered EuNix films grown on Ni(111). Eu is found to be trivalent in the bulk, but divalent at the surface. The low-energy electron-diffraction pattern reveals a (sqrt[3]×sqrt[3])R30° overstructure with respect to Ni(111). Formation of a Ni-rich compound with a stoichiometry close to EuNi5 is concluded. At the surface the stoichiometry is modified due to lattice expansion caused by the surface valence transition of the Eu ions.
©2002 The American Physical Society
URL: http://link.aps.org/abstract/PRB/v65/e075415
DOI: 10.1103/PhysRevB.65.075415
PACS: 68.35.-p, 68.55.-a, 73.20.-r
* On leave from Institute of Physics, St. Petersburg State University, 198904 St. Petersburg, Russia.
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