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Phys. Rev. B 67, 121301 (2003) [4 pages]

Practical design and simulation of silicon-based quantum-dot qubits

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Mark Friesen1,2 *, Paul Rugheimer2, Donald E. Savage2, Max G. Lagally1,2, Daniel W. van der Weide3, Robert Joynt1, and Mark A. Eriksson1 †
1Department of Physics, University of Wisconsin, Madison, Wisconsin 53706
2Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706
3Department of Electrical and Computer Engineering, University of Wisconsin, Madison, Wisconsin 53706

Rapid Communication Received 31 July 2002; revised 31 October 2002; published 11 March 2003

Spins based in silicon provide one of the most promising architectures for quantum computing. A scalable design for silicon-germanium quantum-dot qubits is presented. The design incorporates vertical and lateral tunneling. Simulations of a four-qubit array suggest that the design will enable single electron occupation of each dot of a many-dot array. Performing two-qubit operations has negligible effect on other qubits in the array. Simulation results are used to translate error correction requirements into specifications for gate-voltage control electronics. This translation is a necessary link between error correction theory and device physics.


©2003 The American Physical Society

URL: http://link.aps.org/doi/10.1103/PhysRevB.67.121301
DOI: 10.1103/PhysRevB.67.121301
PACS: 03.67.Lx, 85.35.Be, 73.21.La, 81.07.Ta

* Electronic address: friesen@cae.wisc.edu
† Electronic address: maeriksson@facstaff.wisc.edu

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