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Phys. Rev. B 69, 153310 (2004) [4 pages]

Structure of Er-O complexes in crystalline Si

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F. d’Acapito *
INFM-OGG, c/o GILDA CRG-ESRF, Boîte Postale 220, F-38043 Grenoble, France

S. Mobilio †
Dipartimento di Fisica, Universitá Roma Tre, Via della Vasca Navale 84, I-00146 Roma, Italy

S. Scalese
CNR-IMM, Stradale Primosole 50, I-95121 Catania, Italy

A. Terrasi, G. Franzó, and F. Priolo
INFM and Dipartimento di Fisica, Universitá di Catania, Corso Italia 57, I-95129 Catania, Italy

Received 25 September 2003; revised 8 January 2004; published 30 April 2004

The local structure around Er3+ ions in Er+O doped silicon has been investigated by extended x-ray absorption spectroscopy. By comparing samples obtained by molecular-beam epitaxy and ion implantation a common structure comes out. Er is linked to five or six O atoms at around 2.24 Å and there is a well defined Er-O-Si bond angle of 135° and an Er-Si separation of 3.6 Å. The Er-Si distance is appreciably longer than that found in the more stable structures from ab-initio calculations and a discussion on the possible site for Er is presented.


©2004 The American Physical Society

URL: http://link.aps.org/doi/10.1103/PhysRevB.69.153310
DOI: 10.1103/PhysRevB.69.153310
PACS: 61.72.Tt, 61.10.Ht, 78.55.Ap

* Electronic address: dacapito@esrf.fr
† Also at INFN, Laboratori Nazionali di Frascati, P.O. Box 13, I-00044 Frascati (Roma), Italy.

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