APS » PROLA » Phys. Rev. B » Volume 70 » Issue 20
< Previous article | Next article >

Phys. Rev. B 70, 205340 (2004) [8 pages]

Initial stages of Mn adsorption on Ge(111)

Download: PDF (2105 kB) or Buy this Article (Use Article Pack) Export: BibTeX or EndNote (RIS)

Changgan Zeng1, Wenguang Zhu2,3, Steven C. Erwin4, Zhenyu Zhang1,2,5, and Hanno H. Weitering1,2
1Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
2Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
3International Center for Quantum Structures and Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China
4Center for Computational Materials Science, Naval Research Laboratory, Washington, DC 20375, USA
5Department of Physics and Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA

Received 23 February 2004; revised 2 June 2004; published 29 November 2004

The initial stages of growth of Mn on Ge(111) were studied with scanning tunneling microscopy, x-ray photoelectron spectroscopy, and first-principles density functional theory calculations. Mn atoms adsorb on the H3 sites of the Ge(111)-c(2×8) reconstruction, a process that is usually accompanied by a registry shift (along the [11̅ 0] direction) of an adjacent Ge adatom row. Deposition of approximately one monolayer of Mn and subsequent annealing results in the formation of Mn5Ge3 islands. Epitaxial Mn5Ge3 films can be grown from a solid-state reaction between the Mn deposit and Ge substrate. The Mn5Ge3 films are ferromagnetic metals with a magnetic moment of 2.6  μB per Mn, as determined from the Mn 3s exchange splitting in XPS. Theoretical calculations of the adsorption sites, surface structures, and electronic structure all agree exceedingly well with the experimental observations.


©2004 The American Physical Society

URL: http://link.aps.org/doi/10.1103/PhysRevB.70.205340
DOI: 10.1103/PhysRevB.70.205340
PACS: 68.43.Fg, 68.43.Bc, 68.37.Ef, 75.50.Pp

[ Abstract  |  Previous article  |  Next article  |  Issue 20 ]