Phys. Rev. B 71, 125319 (2005) [8 pages]

Comparison of the optical response of hydrogen-passivated germanium and silicon clusters

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Argyrios Tsolakidis * and Richard M. Martin
Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

Received 30 April 2004; revised 7 December 2004; published 21 March 2005

We present the calculation of the optical response of hydrogen-passivated germanium and silicon clusters using time-dependent density functional theory in the adiabatic local density approximation. The optical response, optical gaps, and other quantities of interest of Ge clusters are compared with the corresponding results for the Si clusters. Our most notable find is that in the low-energy region there are significant differences. More specifically, the Ge clusters exhibit higher oscillator strength and their energy gaps are smaller compared to Si clusters. The overall shape of the optical response of Ge clusters is very similar to that of Si clusters. We conclude that many similarities and differences of these clusters originate from the optical response of the corresponding bulk materials.


©2005 The American Physical Society

URL: http://link.aps.org/doi/10.1103/PhysRevB.71.125319
DOI: 10.1103/PhysRevB.71.125319
PACS: 78.67.−n, 78.67.Bf

* Present address: Department of Physics, Harvard University, Cambridge, Massachusetts 02138.

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