Phys. Rev. B 72, 024447 (2005) [6 pages]

Perpendicular magnetization and exchange bias in epitaxial Cu∕Ni∕Fe50Mn50 thin films

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Haiwen Xi1,3, T. F. Ambrose2, T. J. Klemmer2, R. van de Veerdonk2, J. K. Howard2, and Robert M. White3
1Recording Head Operations (RHO), Seagate Technology, Bloomington, Minnesota 55435, USA
2Seagate Research Center, 1251 Waterfront Place, Pittsburgh, Pennsylvania 15222, USA
3Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA

Received 28 March 2005; revised 9 May 2005; published 22 July 2005

The perpendicular magnetic anisotropy has been achieved in epitaxial Cu∕Ni thin films deposited by magnetron sputtering. A thin Fe50Mn50 layer deposited on top of the Ni layer induces perpendicular exchange bias arising from the interface exchange coupling. The hysteresis loops, the ferromagnetic thickness dependence, and the angular dependence of the exchange bias in as-deposited and field-cooled Cu∕Ni∕Fe50Mn50 trilayer thin films have been investigated. This study reveals many interesting features that are much different from those of in-plane exchange biased systems. It suggests distinct magnetization reversal behavior, domain nucleation, and domain wall motion of the Ni layer in the presence of interface coupling with Fe50Mn50 , which deserves further study.


©2005 The American Physical Society

URL: http://link.aps.org/doi/10.1103/PhysRevB.72.024447
DOI: 10.1103/PhysRevB.72.024447
PACS: 75.70.Cn, 75.30.Gw, 75.60.Ej, 75.50.Ss

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