Phys. Rev. Lett. 42, 1765 - 1769 (1979)Intrinsic-Defect Photoluminescence in Amorphous SiO2 |
PRL Celebrates 50 Years
This Week's Milestone Letters are from 1974: |
C. M. Gee and Marc Kastner
Department of Physics and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Received 5 March 1979
The first observation of photoluminescence (PL) originating from intrinsic defects in annealed and neutron-irradiated amorphous (a-)SiO2 is reported. The PL is compared with that for a-As2S3. The PL spectra scale with energy band gap and the temperature dependence of the PL quantum efficiencies scale with glass transition temperature. This strongly suggests that defects in a-SiO2 and semiconducting chalcogenide glasses are similar.
©1979 The American Physical Society
URL: http://link.aps.org/abstract/PRL/v42/p1765
DOI: 10.1103/PhysRevLett.42.1765
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