Self-Scattering Path-Variable Formulation of High-Field, Time-Dependent, Quantum Kinetic Equations for Semiconductor Transport in the Finite-Collision-Duration Regime

Quantum kinetic equations for describing transport in submicron semiconducting devices in the finite collision duration regime are developed which are nonlocal in time and momentum. Utilizing a projected self-scattering formulation, a retarded path-integral equation is obtained. Quantum kinetic equations are usually exceedingly difficult to solve. The formulation found here presents a powerful technique to achieve these solutions even in the case where nonlocal effects are important.