Phys. Rev. Lett. 44, 1150 - 1153 (1980)

Transition to Localization in Granular Aluminum Films

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G. Deutscher
Tel-Aviv University, Ramat-Aviv, Israel

B. Bandyopadhyay, T. Chui, P. Lindenfeld, W. L. McLean, and T. Worthington *
Serin Physics Laboratory, Rutgers University, New Brunswick, New Jersey 08903

Received 2 November 1979

The temperature dependence of the electrical resistivity of granular aluminum films changes from one regime to another as their superconducting transition temperatures drop towards absolute zero. In nonsuperconducting specimens we observe the exponential behavior associated with strong localization. In the other regime the specimens show a weaker, logarithmic dependence.


©1980 The American Physical Society

URL: http://link.aps.org/abstract/PRL/v44/p1150
DOI: 10.1103/PhysRevLett.44.1150
PACS: 71.50.+t, 71.30.+h, 71.55.Jv

* Present address: IBM Thomas J. Watson Research Center, Yorktown Heights, N. Y. 10598.

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