Phys. Rev. Lett. 47, 356 - 358 (1981)Measurement of Lattice Temperature of Silicon during Pulsed Laser Annealing |
B. Stritzker
Institut für Festkörperforschung, Kernforschungsanlage Jülich, D-5170 Jülich, West Germany
A. Pospieszczyk and J. A. Tagle *
Association EURATOM-Kernforschungsanlage, Institut für Plasmaphysik, Kernforschungsanlage Jülich, D-5170 Jülich, West Germany
Received 27 May 1981
A classical time-of-flight method was used to determine the temperature of evaporated Si atoms and thus the lattice temperature of Si during pulsed laser annealing. The resulting temperatures between 1200 and 3000 K for energy densities between 1.0 and 2.5 J/cm2 clearly support a strictly thermal annealing model including melting of the surface region of Si.
©1981 The American Physical Society
URL: http://link.aps.org/abstract/PRL/v47/p356
DOI: 10.1103/PhysRevLett.47.356
PACS: 68.40.+e, 81.30.-t, 81.40.-z
* Permanent address: Departamento de Fisica Fundamental e Instituto de Fisica del Estado Solido (Consejo Superior de Investigaciones Cientisicas), Universidad Autonoma, Madrid-34, Spain.
See Also
Comment: A. Aydinli, M. C. Lee, H. W. Lo, and A. Compaan, Comment on "Lattice Temperature during Pulsed Laser Annealing", Phys. Rev. Lett. 47, 1676 (1981)
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