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Phys. Rev. Lett. 54, 2623 - 2626 (1985)

Observation of Resonant Impurity States in Semiconductor Quantum-Well Structures

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T. A. Perry and R. Merlin
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109

B. V. Shanabrook and J. Comas
Naval Research Laboratory, Washington, D.C. 20375

Received 30 January 1985

Resonant Raman scattering experiments on GaAs(Si doped)-AlxGa1-xAs quantum-well structures show transitions involving the ground state of the donors and narrow resonant donor states derived from higher conduction subbands. These new impurity-related features, which occur at slightly higher energies than the associated conduction intersubband excitations, have been studied as a function of power density, temperature, and well width.


©1985 The American Physical Society

URL: http://link.aps.org/doi/10.1103/PhysRevLett.54.2623
DOI: 10.1103/PhysRevLett.54.2623
PACS: 73.40.Lq, 71.55.Fr, 78.30.Gt

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