Phys. Rev. Lett. 56, 761 - 764 (1986)Ultrafast heating of silicon on sapphire by femtosecond optical pulses |
M. C. Downer and C. V. Shank
AT&T Bell Laboratories, Holmdel, New Jersey 07733
Received 20 December 1985
We monitor the refractive index n+ik of an optically thin silicon layer following femtosecond photoexcitation below the threshold fluence Eth for melting, in order to measure the rate of lattice temperature rise. We find that most of the heating is delayed with respect to the photoexcitation, but becomes faster as Eth is approached. A model based on delayed Auger heating is presented.
©1986 The American Physical Society
URL: http://link.aps.org/abstract/PRL/v56/p761
DOI: 10.1103/PhysRevLett.56.761
PACS: 79.20.Ds, 63.20.Kr, 78.65.Jd
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