Phys. Rev. Lett. 56, 761 - 764 (1986)

Ultrafast heating of silicon on sapphire by femtosecond optical pulses

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M. C. Downer and C. V. Shank
AT&T Bell Laboratories, Holmdel, New Jersey 07733

Received 20 December 1985

We monitor the refractive index n+ik of an optically thin silicon layer following femtosecond photoexcitation below the threshold fluence E_th for melting, in order to measure the rate of lattice temperature rise. We find that most of the heating is delayed with respect to the photoexcitation, but becomes faster as E_th is approached. A model based on delayed Auger heating is presented.

URL: http://link.aps.org/abstract/PRL/v56/p761
DOI: 10.1103/PhysRevLett.56.761
PACS: 79.20.Ds, 63.20.Kr, 78.65.Jd

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Phys. Rev. Lett. 56, 761 - 764 (1986)

Ultrafast heating of silicon on sapphire by femtosecond optical pulses

PRL Celebrates 50 Years