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Phys. Rev. Lett. 59, 700 - 703 (1987)

Resonant Raman scattering by phonons in a strong magnetic field: GaAs

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G. Ambrazevicius, M. Cardona, and R. Merlin
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Federal Republic of Germany

Received 27 May 1987

We have measured Raman scattering by LO phonons in GaAs in a magnetic field (≤12.8 T) at 10 K. The intensity displays Landau-level oscillations. This effect shows promise as a modulation technique for the investigation of interband magnetoabsorption. As an application we have studied the nonparabolicity of the Γ1 conduction band of GaAs for energies up to 0.4 eV above its bottom. Standard k⋅p expansions, including the Γ1 and Γ15 conduction and the Γ15 valence bands, cannot explain the observed dispersion. It can be explained by inclusion of interactions with higher bands.


©1987 The American Physical Society

URL: http://link.aps.org/doi/10.1103/PhysRevLett.59.700
DOI: 10.1103/PhysRevLett.59.700
PACS: 71.25.Tn, 78.20.Ls, 78.30.Fs

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