Phys. Rev. Lett. 61, 1871 - 1874 (1988)Photostimulated desorption in laser-assisted etching of silicon |
PRL Celebrates 50 Years
This Week's Milestone Letters are from 1984: |
F. A. Houle
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099
Received 18 April 1988
Photodesorption of SiF3 groups, which are the principal adsorbates on a silicon surface during etching by XeF2, is found to be responsible for the etch-rate enhancement observed under illumination by low-power, cw band-gap radiation. It is proposed that desorption is stimulated by photogenerated-charge-carrier–mediated chemical reaction, and not the simple charge trapping and recombination mechanism usually invoked for desorption from semiconductor surfaces.
©1988 The American Physical Society
URL: http://link.aps.org/abstract/PRL/v61/p1871
DOI: 10.1103/PhysRevLett.61.1871
PACS: 78.65.-s, 73.25.+i, 82.65.My
[ Abstract | Previous article | Next article | Issue 16 ]
About PROLA | Terms and Conditions | Subscriptions | Search | Help
Content in PROLA © 2008 by The American Physical Society All rights reserved. PROLA™ is a trademark of The American Physical Society. Use of APS online journals implies that the user has read and agrees to the Terms and Conditions in the Subscription Agreement.