APS » PROLA » Phys. Rev. Lett. » Volume 79 » Issue 24

Phys. Rev. Lett. 79, 4822 - 4825 (1997)

Determination of 2D Pair Correlations and Pair Interaction Energies of In Atoms in Molecular Beam Epitaxially Grown InGaAs Alloys

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Kuo-Jen Chao and Chih-Kang Shih
Department of Physics, University of Texas, Austin, Texas 78712

D. W. Gotthold and B. G. Streetman
Department of Electrical and Computer Engineering, University of Texas, Austin, Texas 78712

Received 11 July 1997

Intra- and interlayer atom-atom correlations in molecular beam epitaxially grown dilute InGaAs alloys were studied using cross-sectional scanning tunneling microscopy. By imaging individual chemical constituents we construct a large ensemble of “atom maps” from which two-dimensional In-In pair correlation functions were deduced. We found a total absence of interlayer pair correlation along [001] and a strong negative correlation for the nearest neighbor (nn) pair along [110], corresponding to a repulsive interaction energy of 0.1 eV for the nn In pairs along [110]. In addition, a weak long-range oscillation in the correlation function along [110] is observed.


©1997 The American Physical Society

URL: http://link.aps.org/abstract/PRL/v79/p4822
DOI: 10.1103/PhysRevLett.79.4822
PACS: 61.16.Ch, 61.66.Dk, 61.72.Yx, 81.05.Ea

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