Phys. Rev. Lett. 80, 1336 - 1339 (1998)

Cryogenic UHV-STM Study of Hydrogen and Deuterium Desorption from Si(100)

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E. T. Foley, A. F. Kam, and J. W. Lyding
Beckman Institute and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801

Ph. Avouris
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598

Received 19 June 1997

A cryogenic UHV scanning tunneling microscope has been used to study the electron stimulated desorption of hydrogen and deuterium from Si(100) surfaces at 11 K. A strong isotope effect is observed, as seen previously at room temperature. Above ∼5 eV, the desorption yields for H and D are temperature independent, while in the tunneling regime, below 4 eV, H is a factor of ∼300 easier to desorb at 11 than at 300 K. This large temperature dependence is explained by a model that involves multiple vibrational excitation and takes into account the increase of the Si-H(D) vibrational lifetime at low temperature.


©1998 The American Physical Society

URL: http://link.aps.org/abstract/PRL/v80/p1336
DOI: 10.1103/PhysRevLett.80.1336
PACS: 79.20.La, 61.16.Ch, 87.64.Dz

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