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Phys. Rev. Lett. 83, 2989 - 2992 (1999)

Atomic Structure of the GaAs(001)-(2×4) Surface Resolved Using Scanning Tunneling Microscopy and First-Principles Theory

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V. P. LaBella, H. Yang, D. W. Bullock, and P. M. Thibado
Department of Physics, The University of Arkansas, Fayetteville, Arkansas 72701

Peter Kratzer and Matthias Scheffler
Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin (Dahlem), Germany

Received 11 February 1999

The atomic arrangement of the technologically important As-rich GaAs(001)-(2×4) reconstructed surface is determined using bias-dependent scanning tunneling microscopy (STM) and first-principles electronic structure calculations. The STM images reveal the relative position and depth of the atomic-scale features within the trenches between the top-layer As dimers, which are in agreement with the β2(2×4) structural model. The bias-dependent simulated STM images reveal that a retraction of the topmost dangling bond orbitals is the novel electronic mechanism that enables the STM tip to image the trench structure.


©1999 The American Physical Society

URL: http://link.aps.org/doi/10.1103/PhysRevLett.83.2989
DOI: 10.1103/PhysRevLett.83.2989
PACS: 68.35.Bs, 61.16.Ch, 61.50.Ah, 81.05.Ea

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