Phys. Rev. Lett. 84, 4645 - 4648 (2000)Scanning Tunneling Microscopy Identification of Atomic-Scale Intermixing on Si(100) at Submonolayer Ge Coverages
X. R. Qin1, B. S. Swartzentruber2, and M. G. Lagally1 Received 24 January 2000 The positions of Ge atoms intermixed in the Si(100) surface at very low concentration are identified using empty-state imaging in scanning tunneling microscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions. ©2000 The American Physical Society
URL: http://link.aps.org/doi/10.1103/PhysRevLett.84.4645 [ Abstract | Previous article | Next article | Issue 20 ] |
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