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Phys. Rev. Lett. 86, 4552 - 4555 (2001)

Martensitic fcc-to-hcp Transformation Observed in Xenon at High Pressure

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H. Cynn1, C. S. Yoo1, B. Baer1, V. Iota-Herbei1, A. K. McMahan1, M. Nicol2, and S. Carlson3
1H-Division, Physics and Advanced Technology Directorate, Lawrence Livermore National Laboratory, University of California, Livermore, California 94550
2High Pressure Science and Engineering Center, University of Nevada–Las Vegas, Las Vegas, Nevada 89154-4002
3European Synchrotron Radiation Facility, Grenoble, France

Received 18 August 2000

Angle-resolved x-ray diffraction patterns of Xe to 127 GPa indicate that the fcc-to-hcp transition occurs martensitically between 3 and 70 GPa in diamond-anvil cells without an intermediate phase. These data also reveal that the transition occurs by the introduction of stacking disorder in the fcc lattice at low pressure, which grows into hcp domains with increasing pressure. The small energy difference between the hcp and the fcc structures may allow the two phases to coexist over a wide pressure range. Evidence of similar stacking disorder and incipient growth of an hcp phase are also observed in solid Kr.


©2001 The American Physical Society

URL: http://link.aps.org/doi/10.1103/PhysRevLett.86.4552
DOI: 10.1103/PhysRevLett.86.4552
PACS: 61.50.Ks, 61.72.Hh, 61.72.Nn, 64.30.+t

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