corner
corner
PROLA » Phys. Rev. B » Volume 36 » Issue 11
< Previous Issue | Next Issue >

Physical Review B – 15 October 1987
Volume 36, Issue 11

ARTICLES

•
Surface segregation at metalndashIII-V-compound-semiconductor interfaces
Zhangda Lin, F. Xu, and J. H. Weaver
pp. 5777-5783 [View Page Images or PDF (1,188 kB)]
•
Universal features of hydrogen absorption in amorphous transition-metal alloys
J. H. Harris, W. A. Curtin, and M. A. Tenhover
pp. 5784-5797 [View Page Images or PDF (2,804 kB)]
•
Quantum transport for a many-body system using a quantum Langevin-equation approach
G. Y. Hu and R. F. O’Connell
pp. 5798-5808 [View Page Images or PDF (1,433 kB)]
•
High-resolution photoemission study of the electronic structure of the noble-metal (111) surfaces
S. D. Kevan and R. H. Gaylord
pp. 5809-5818 [View Page Images or PDF (1,867 kB)]
•
Adsorbate effects on a mixed-valence compound: Carbon monoxide chemisorption on CeIr2
J. M. Lindquist, John C. Hemminger, and Jon Lawrence
pp. 5819-5829 [View Page Images or PDF (1,975 kB)]
•
Modified method of variational calculations of Wannier functions: The Wannier functions for d bands of Cu and paramagnetic Ni
P. Modrak and R. Wojnecki
pp. 5830-5839 [View Page Images or PDF (1,292 kB)]
•
Two-dimensional Yb on a Mo(110) surface
A. Stenborg and E. Bauer
pp. 5840-5847 [View Page Images or PDF (1,397 kB)]
•
Vibrational properties of β1-H and β1-D on W(001): Electron-energy-loss measurements and lattice-dynamical calculations
J. P. Woods, A. D. Kulkarni, J. L. Erskine, and F. W. de Wette
pp. 5848-5860 [View Page Images or PDF (2,094 kB)]
•
Relativistic screened orbital radii
S. B. Zhang, Marvin L. Cohen, and J. C. Phillips
pp. 5861-5867 [View Page Images or PDF (768 kB)]
•
Dynamics of dense lattices
Philip Rosenau
pp. 5868-5876 [View Page Images or PDF (1,293 kB)]
•
Resistance of a one-dimensional quasicrystal: Power-law growth
Bill Sutherland and Mahito Kohmoto
pp. 5877-5886 [View Page Images or PDF (1,305 kB)]
•
Hole subbands in strained GaAs-Ga1-xAlxAs quantum wells: Exact solution of the effective-mass equation
Lucio Claudio Andreani, Alfredo Pasquarello, and Franco Bassani
pp. 5887-5894 [View Page Images or PDF (1,154 kB)]
•
Measurement of the grain-boundary states in semiconductors by deep-level transient spectroscopy
A. Broniatowski
pp. 5895-5905 [View Page Images or PDF (1,830 kB)]
•
Electronic and vibronic structure of the (GaAs)1(AlAs)1 superlattice
M. Cardona, T. Suemoto, N. E. Christensen, T. Isu, and K. Ploog
pp. 5906-5913 [View Page Images or PDF (1,253 kB)]
•
Physical nature of the InP near-surface defect acceptor and donor states
K. Ken Chin, R. Cao, T. Kendelewicz, K. Miyano, J. -J. Yeh, I. Lindau, and W. E. Spicer
pp. 5914-5919 [View Page Images or PDF (941 kB)]
•
Heterojunction band offsets and the interface dielectric function
J. C. Durán, F. Flores, C. Tejedor, and A. Munoz
pp. 5920-5924 [View Page Images or PDF (777 kB)]
•
Screening of shallow impurities in germanium within the local-density approximation
Andrzej Fleszar
pp. 5925-5932 [View Page Images or PDF (1,665 kB)]
•
Infrared absorption in Cd1-xMnxTe: Bound-magnetic-polaron effects on the photoionization of acceptors
C. A. Huber, J. A. Perez, and T. E. Huber
pp. 5933-5940 [View Page Images or PDF (1,394 kB)]
•
Electron-induced extended-fine-structure measurements of thin-film growth and reaction
Y. U. Idzerda, Ellen D. Williams, T. L. Einstein, and R. L. Park
pp. 5941-5948 [View Page Images or PDF (1,591 kB)]
•
Elementary electronic excitations in a quasi-two-dimensional electron gas
Jainendra K. Jain and S. Das Sarma
pp. 5949-5952 [View Page Images or PDF (700 kB)]
•
Scattering states and distribution functions for microstructures
A. M. Kriman, N. C. Kluksdahl, and D. K. Ferry
pp. 5953-5959 [View Page Images or PDF (1,202 kB)]
•
Magnetoplasmons in thin films in the Voigt configuration
M. S. Kushwaha and P. Halevi
pp. 5960-5967 [View Page Images or PDF (1,306 kB)]
•
Electronic structure of Pb1-xSnxTe semiconductor alloys
Seongbok Lee and John D. Dow
pp. 5968-5973 [View Page Images or PDF (985 kB)]
•
Surface electronic structure of Si(111)7×7-Ge and Si(111)5×5-Ge studied with photoemission and inverse photoemission
Per Martensson, Wei-Xin Ni, Göran V. Hansson, J. Michael Nicholls, and Bruno Reihl
pp. 5974-5981 [View Page Images or PDF (1,329 kB)]
•
Temperature dependence of hyperfine coupling of the anion antisite in III-V compounds
A. Mauger, H. J. von Bardeleben, J. C. Bourgoin, and M. Lannoo
pp. 5982-5988 [View Page Images or PDF (1,066 kB)]
•
Ionized-impurity scattering in the strong-screening limit
J. R. Meyer and F. J. Bartoli
pp. 5989-6000 [View Page Images or PDF (2,011 kB)]
•
Electron-diffraction study of rubidium-intercalated graphite
Richard K. Mittleman
pp. 6001-6011 [View Page Images or PDF (2,864 kB)]
•
Inversion asymmetry in Hg1-xMnxSe
J. A. Nobel, J. R. Anderson, and W. B. Johnson
pp. 6012-6017 [View Page Images or PDF (915 kB)]
•
Monte Carlo investigation of the electron-hole-interaction effects on the ultrafast relaxation of hot photoexcited carriers in GaAs
M. A. Osman and D. K. Ferry
pp. 6018-6032 [View Page Images or PDF (2,259 kB)]
•
Theoretical analysis of plasmon, polar phonon, and hot-electron energy relaxation in nondegenerate semiconductors
Hisanao Sato and Yoshikazu Hori
pp. 6033-6039 [View Page Images or PDF (926 kB)]
•
Triplet excitations in conjugated polymers
W. P. Su
pp. 6040-6044 [View Page Images or PDF (635 kB)]
•
Phonon shifts and widths in dilute elemental semiconducting alloys
D. N. Talwar and K. S. Suh
pp. 6045-6053 [View Page Images or PDF (1,390 kB)]
•
Resonant Raman scattering in GaAs-Ga1-xAlxAs quantum wells in an electric field
C. Tejedor, J. M. Calleja, L. Brey, L. Vina, E. E. Mendez, W. I. Wang, M. Staines, and M. Cardona
pp. 6054-6057 [View Page Images or PDF (689 kB)]
•
Theoretical study of BN, BP, and BAs at high pressures
Renata M. Wentzcovitch, Marvin L. Cohen, and Pui K. Lam
pp. 6058-6068 [View Page Images or PDF (2,059 kB)]
•
Propagating two-dimensional density fluctuations in the graphite intercalate C36Cs
J. W. White and P. A. Wielopolski
pp. 6069-6071 [View Page Images or PDF (363 kB)]
•
Surface states and the exponential valence-band tail in a-Si:H
K. Winer and L. Ley
pp. 6072-6078 [View Page Images or PDF (1,306 kB)]
•
Tunneling microscopy of Ge(001)
J. A. Kubby, J. E. Griffith, R. S. Becker, and J. S. Vickers
pp. 6079-6093 [View Page Images or PDF (3,087 kB)]
•
Free, quasifree, momentarily trapped, and self-trapped exciton states in molecular crystals
Jai Singh and A. Matsui
pp. 6094-6098 [View Page Images or PDF (765 kB)]
•
Excitons and biexcitons in semiconductor quantum wires
Ladislaus Bányai, Ian Galbraith, Claudia Ell, and Hartmut Haug
pp. 6099-6104 [View Page Images or PDF (748 kB)]
•
Bulk and surface electronic structure of hexagonal boron nitride
A. Catellani, M. Posternak, A. Baldereschi, and A. J. Freeman
pp. 6105-6111 [View Page Images or PDF (1,188 kB)]
•
Interatomic Auger rates for the sodium fluoride crystal
T. A. Green and D. R. Jennison
pp. 6112-6119 [View Page Images or PDF (1,501 kB)]
•
Optical detection of a hydrogen complex responsible for the F phosphorescence in thermochemically reduced MgO crystals
V. M. Orera and Y. Chen
pp. 6120-6124 [View Page Images or PDF (806 kB)]
•
Analysis of the off-center effect of Cu+ in alkali halides using crystal-field theory
Stephen A. Payne
pp. 6125-6131 [View Page Images or PDF (1,095 kB)]
•
Optical properties of GeO2
N. M. Ravindra, R. A. Weeks, and D. L. Kinser
pp. 6132-6134 [View Page Images or PDF (477 kB)]
•
Tight-binding calculation of surface defects in SrTiO3
G. Toussaint, M. O. Selme, and P. Pecheur
pp. 6135-6141 [View Page Images or PDF (1,113 kB)]

BRIEF REPORTS

•
Confined optical phonons in a GaAs single quantum well in a GaAs/AlxGa1-xAs heterostructure
Akhilesh K. Arora, E. -K. Suh, A. K. Ramdas, F. A. Chambers, and A. L. Moretti
pp. 6142-6144 [View Page Images or PDF (430 kB)]
•
Trapping and oxidation of CO at surface step sites of MgO
K. Matsumura, S. Yamabe, H. Fujioka, Y. Yanagisawa, and R. Huzimura
pp. 6145-6148 [View Page Images or PDF (562 kB)]
•
Interpolative solution for the Anderson model of an impurity
J. Ferrer, A. Martín-Rodero, and F. Flores
pp. 6149-6151 [View Page Images or PDF (371 kB)]
•
Enhancement of nonparabolicity effects in a quantum well
U. Ekenberg
pp. 6152-6155 [View Page Images or PDF (549 kB)]
•
Stability and electronic structure of ultrathin-layer superlattices: (GaAs)n/(AlAs)n
Atsushi Oshiyama and Mineo Saito
pp. 6156-6159 [View Page Images or PDF (632 kB)]
•
Unoccupied surface-state band on Si(111) 2×1
P. Perfetti, J. M. Nicholls, and B. Reihl
pp. 6160-6163 [View Page Images or PDF (662 kB)]
•
Search for electric echoes in K0.3MoO3
George Mozurkewich and L. Mihály
pp. 6164-6167 [View Page Images or PDF (576 kB)]

COMMENTS

•
Structure of the asymptotic exchange hole
Hellmut J. Juretschke
pp. 6168-6170 [View Page Images or PDF (489 kB)]
•
Comment on the application of Kimball’s formula for small values of rs
Gerhard F. Hubmer
pp. 6171-6172 [View Page Images or PDF (200 kB)]
•
Reply to ‘‘Comment on the application of Kimball’s formula for small values of rs’’
M. Howard Lee and J. Hong
pp. 6173-6174 [View Page Images or PDF (316 kB)]
•
One-dimensional electron-phonon problem
Laurent Hubert
pp. 6175-6176 [View Page Images or PDF (218 kB)]

ERRATA

•
Erratum: Piezoelectricity and flexoelectricity in crystalline dielectrics
A. K. Tagantsev
pp. 6177 [View Page Images or PDF (20 kB)]

RAPID COMMUNICATIONS

•
Spin-aligned momentum distributions of transition-metal ferromagnets studied with circularly polarized synchrotron radiation
Dennis M. Mills
pp. 6178-6181 [View Page Images or PDF (528 kB)]
•
Spin-dependent electron interactions in metals across the compressibility and spin-susceptibility anomalies
Setsuo Ichimaru and Shigenori Tanaka
pp. 6182-6185 [View Page Images or PDF (522 kB)]
•
Temperature-dependent surface morphology of Au/Cu(001)
J. C. Hansen, J. A. Benson, W. D. Clendening, M. T. McEllistrem, and J. G. Tobin
pp. 6186-6189 [View Page Images or PDF (782 kB)]
•
Lattice-dynamical analysis of the anomalous mode of W(001)
A. D. Kulkarni, F. W. de Wette, and J. Prade
pp. 6190-6193 [View Page Images or PDF (609 kB)]
•
Scanning-tunneling microscopy at small tip-to-surface distances
S. Ciraci and Inder P. Batra
pp. 6194-6197 [View Page Images or PDF (651 kB)]
•
ESR linewidth behavior for barely metallic n-type silicon
V. Zarifis and T. G. Castner
pp. 6198-6201 [View Page Images or PDF (689 kB)]
•
Photoelectron paramagnetic resonance of Pt- in silicon
P. Omling, P. Emanuelsson, and H. G. Grimmeiss
pp. 6202-6205 [View Page Images or PDF (736 kB)]
•
Nonuniformity in void concentration between the initial and final growth stage of sputtered a-Ge films studied using spectroscopic ellipsometry
B. Yang, L. J. Pilione, J. E. Yehoda, K. Vedam, and R. Messier
pp. 6206-6208 [View Page Images or PDF (929 kB)]
•
Model for the energetics of Si and Ge (111) surfaces
David Vanderbilt
pp. 6209-6212 [View Page Images or PDF (709 kB)]
•
Cs and O adsorption on Si(100) 2×1: A model system for promoted oxidation of semiconductors
J. E. Ortega, E. M. Oellig, J. Ferrón, and R. Miranda
pp. 6213-6216 [View Page Images or PDF (719 kB)]
•
Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen
W. B. Jackson and M. D. Moyer
pp. 6217-6220 [View Page Images or PDF (627 kB)]
•
Indium-induced reconstructions of the Si(111) surface studied by scanning tunneling microscopy
J. Nogami, Sang-il Park, and C. F. Quate
pp. 6221-6224 [View Page Images or PDF (877 kB)]
•
New path-integral solution for the density of states of two-dimensional electrons in high magnetic fields
M. Nithisoontorn, R. Lassnig, and E. Gornik
pp. 6225-6227 [View Page Images or PDF (384 kB)]
•
Hydrogen passivation of shallow acceptors in c-Si: An ab initio approach
A. Amore Bonapasta, A. Lapiccirella, N. Tomassini, and M. Capizzi
pp. 6228-6230 [View Page Images or PDF (551 kB)]
•
Room-temperature growth of two-dimensional gold films on GaAs(001)
T. G. Andersson, G. Le Lay, J. Kanski, and S. P. Svensson
pp. 6231-6234 [View Page Images or PDF (683 kB)]
•
Picosecond dynamics of band-edge photoexcitation in trans-polyacetylene
A. Rosenberg, D. L. Weidman, and D. B. Fitchen
pp. 6235-6238 [View Page Images or PDF (571 kB)]
•
Investigation of paraexcitons in KI
F. Beerwerth and D. Fröhlich
pp. 6239-6241 [View Page Images or PDF (459 kB)]
 
< Previous Issue | Next Issue >