Physical Review B
– 15 August 1989
Volume 40, Issue 5
ARTICLES
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Full-potential linear augmented–Slater-type-orbital method
G. W. Fernando, J. W. Davenport, R. E. Watson, and M. Weinert
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Occupied electronic structure of Au and Ag on Ge(111)
B. J. Knapp, J. C. Hansen, M. K. Wagner, W. D. Clendening, and J. G. Tobin
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Anisotropic tight-binding model for localization
Qiming Li, C. M. Soukoulis, E. N. Economou, and G. S. Grest
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Bulk and surface vibrational modes in NiAl
Mark Mostoller, R. M. Nicklow, D. M. Zehner, S.-C. Lui, J. M. Mundenar, and E. W. Plummer
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Molecular cluster model for magnetic iron
A. C. Pavo, C. A. Taft, B. L. Hammond, and W. A. Lester Jr.
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Electrical and optical characterization of metastable deep-level defects in GaAs
W. R. Buchwald, G. J. Gerardi, E. H. Poindexter, N. M. Johnson, H. G. Grimmeiss, and D. J. Keeble
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Entropy of migration for atomic hopping
T. W. Dobson, J. F. Wager, and J. A. Van Vechten
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Direct measurement of resonant and nonresonant tunneling times in asymmetric coupled quantum wells
D. Y. Oberli, J. Shah, T. C. Damen, C. W. Tu, T. Y. Chang, D. A. B. Miller, J. E. Henry, R. F. Kopf, N. Sauer, and A. E. DiGiovanni
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Phonon properties of GaAs/AlAs superlattice grown along the [110] direction
Z. V. Popović, M. Cardona, E. Richter, D. Strauch, L. Tapfer, and K. Ploog
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Quantum-well states under biaxial compression and tension
M. Schlierkamp, R. Wille, K. Greipel, U. Rössler, W. Schlapp, and G. Weimann
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Optical properties of vanadium silicide polycrystalline films
A. Borghesi, A. Piaggi, G. Guizzetti, F. Nava, and M. Bacchetta
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Thermal properties of boron and borides
David G. Cahill, Henry E. Fischer, S. K. Watson, R. O. Pohl, and G. A. Slack
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Electronic properties of ionic insulators on semiconductor surfaces: Alkali fluorides on GaAs(100)
Ruth Klauser, Masakazu Kubota, Yoshitada Murata, Masaharu Oshima, Yasuko Yamada Maruo, Tomoaki Kawamura, and Tsuneaki Miyahara
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Determination of the whole set of elastic constants of a polymeric Langmuir-Blodgett film by Brillouin spectroscopy
Fabrizio Nizzoli, Burkard Hillebrands, Sukmock Lee, George I. Stegeman, Gisela Duda, Gerhard Wegner, and Wolfgang Knoll
BRIEF REPORTS
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Binding energies of biexcitons in AlxGa1-xAs/GaAs multiple quantum wells
D. C. Reynolds, K. K. Bajaj, C. E. Stutz, R. L. Jones, W. M. Theis, P. W. Yu, and K. R. Evans
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Gap mode of Mn in HgTe
W. Lu, Z. Y. Yu, H. J. Ye, W. L. Xu, K. J. Ma, and S. C. Shen
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Activationless hopping of correlated electrons in n-type GaAs
F. Tremblay, M. Pepper, R. Newbury, D. Ritchie, D. C. Peacock, J. E. F. Frost, G. A. C. Jones, and G. Hill
RAPID COMMUNICATIONS
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Electronic structure near (210) tilt boundaries in nickel
S. Crampin, D. D. Vvedensky, J. M. MacLaren, and M. E. Eberhart
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Analytic approach to charge transfer during atom-surface scattering
Alan T. Dorsey, Karsten W. Jacobsen, Zachary H. Levine, and John W. Wilkins
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Reversible temperature-dependent Fermi-level movement for metal-GaAs(110) interfaces
I. M. Vitomirov, G. D. Waddill, C. M. Aldao, Steven G. Anderson, C. Capasso, and J. H. Weaver
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Tunable Aharonov-Bohm effect in an electron interferometer
P. G. N. de Vegvar, G. Timp, P. M. Mankiewich, R. Behringer, and J. Cunningham
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