Physical Review B
– 15 January 1991
Volume 43, Issue 3
ARTICLES
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Molecular adsorption on oxide surfaces: Electronic structure and orientation of NO on NiO(100)/Ni(100) and on NiO(100) as determined from electron spectroscopies and ab initio cluster calculations
H. Kuhlenbeck, G. Odörfer, R. Jaeger, G. Illing, M. Menges, Th. Mull, H.-J. Freund, M. Pöhlchen, V. Staemmler, S. Witzel, C. Scharfschwerdt, K. Wennemann, T. Liedtke, and M. Neumann
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Magnetoplasmon polaritons in finite n-i-p-i superlattices
E. L. Albuquerque, P. Fulco, G. A. Farias, M. M. Auto, and D. R. Tilley
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Electronic structure of strained-layer AlAs/InAs (001) superlattices
J. Arriaga, G. Armelles, M. C. Muoz, J. M. Rodrguez, P. Castrillo, M. Recio, V. R. Velasco, F. Briones, and F. Garca-Moliner
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Vibrational properties of CdGeP2
L. Artús, J. Pascual, J. Pujol, J. Camassel, and R. S. Feigelson
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Highly conducting polyacetylene: Three-dimensional delocalization
H. H. S. Javadi, A. Chakraborty, C. Li, N. Theophilou, D. B. Swanson, A. G. MacDiarmid, and A. J. Epstein
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Magnetic-field-induced resonant tunneling across a thick square barrier
V. Marigliano Ramaglia, A. Tagliacozzo, F. Ventriglia, and G. P. Zucchelli
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Pseudopotential plane-wave calculations for ZnS
José Luriaas Martins, N. Troullier, and S.-H. Wei
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Miniband structure in InxGa1-xAs-GaAs strained-layer superlattices
N. J. Pulsford, R. J. Nicholas, R. J. Warburton, G. Duggan, K. J. Moore, K. Woodbridge, and C. Roberts
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Resonant tunneling of holes in Si/SixGe1-x quantum-well structures
G. Schuberth, G. Abstreiter, E. Gornik, F. Schäffler, and J. F. Luy
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Divacancy acceptor levels in ion-irradiated silicon
B. G. Svensson, B. Mohadjeri, A. Hallén, J. H. Svensson, and J. W. Corbett
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Even-parity excited states of Ag-centers in alkali halides
M. Bellatreccia, M. Casalboni, R. Francini, and U. M. Grassano
BRIEF REPORTS
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Surface strain of tungsten (001)
Jing Chen, H. Krakauer, and D. J. Singh
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Conservation of bond lengths in strained Ge-Si layers
J. C. Woicik, C. E. Bouldin, M. I. Bell, J. O. Cross, D. J. Tweet, B. D. Swanson, T. M. Zhang, L. B. Sorensen, C. A. King, J. L. Hoyt, P. Pianetta, and J. F. Gibbons
RAPID COMMUNICATIONS
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Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipoles
L. Sorba, G. Bratina, G. Ceccone, A. Antonini, J. F. Walker, M. Micovic, and A. Franciosi
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Gallium interstitials in GaAs/AlAs superlattices
J. M. Trombetta, T. A. Kennedy, W. Tseng, and D. Gammon
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Substitutionality of Te- and Sn-related DX centers in AlxGa1-xAs
Kin Man Yu, Ken Khachaturyan, Eicke R. Weber, Henry P. Lee, and Etienne G. Kolas
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