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PROLA » Phys. Rev. B » Volume 44 » Issue 4
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Physical Review B – 15 July 1991
Volume 44, Issue 4

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Exact functional differential variant of the generalized Kadanoff-Baym ansatz
Hum Chi Tso and Norman J. Morgenstern Horing
pp. 1451-1457 [View Page Images or PDF (793 kB)]
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Exact solutions of frustrated ordinary and chiral eight-site Hubbard models
J. K. Freericks, L. M. Falicov, and D. S. Rokhsar
pp. 1458-1474 [View Page Images or PDF (2,947 kB)]
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Analytic description of the Hubbard model in D dimensions with the Gutzwiller wave function
Zsolt Gulácsi and Miklos Gulácsi
pp. 1475-1479 [View Page Images or PDF (621 kB)]
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Valence-electron correlation in extended systems: A nonparametric exponential transformation of molecular orbitals into valence-bond wave functions
Brahim Oujia and Jean-Paul Malrieu
pp. 1480-1486 [View Page Images or PDF (947 kB)]
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Comparison between holographic and transient-photocurrent measurements of electron mobility in photorefractive Bi12SiO20
J. P. Partanen, P. Nouchi, J. M. C. Jonathan, and R. W. Hellwarth
pp. 1487-1491 [View Page Images or PDF (908 kB)]
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Bulk-plasmon dispersion relations in metals
Ll. Serra, F. Garcias, M. Barranco, N. Barberán, and J. Navarro
pp. 1492-1498 [View Page Images or PDF (1,156 kB)]
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Two types of self-trapped excitons in alkali halide crystals
A. L. Shluger, N. Itoh, V. E. Puchin, and E. N. Heifets
pp. 1499-1508 [View Page Images or PDF (2,024 kB)]
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Density and one-matrix functionals generated by constrained-search theory
Steven M. Valone
pp. 1509-1522 [View Page Images or PDF (2,135 kB)]
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Semiclassical description of the dynamics and pinning in charge-density waves
T. A. Issaevitch
pp. 1523-1529 [View Page Images or PDF (1,008 kB)]
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Electronic structure of MnO
J. van Elp, R. H. Potze, H. Eskes, R. Berger, and G. A. Sawatzky
pp. 1530-1537 [View Page Images or PDF (1,394 kB)]

Semiconductors I: bulk

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Interatomic force fields for silicon microclusters
James R. Chelikowsky, Keith M. Glassford, and J. C. Phillips
pp. 1538-1545 [View Page Images or PDF (1,491 kB)]
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Melting temperature of unrelaxed amorphous silicon
M. G. Grimaldi, P. Baeri, and M. A. Malvezzi
pp. 1546-1553 [View Page Images or PDF (1,478 kB)]
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Dynamics of low-energy holes in germanium
Rainer Till and Fritz Keilmann
pp. 1554-1564 [View Page Images or PDF (1,815 kB)]
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Ultrashallow acceptors in neutron-transmutation-doped silicon
M. K. Udo, C. R. LaBrec, and A. K. Ramdas
pp. 1565-1578 [View Page Images or PDF (2,506 kB)]
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Jahn-Teller effect for Fe2+ in III-V semiconductors
Eugenio E. Vogel, Olga Mualin, Manuel A. de Orúe, and Juan Rivera-Iratchet
pp. 1579-1587 [View Page Images or PDF (1,391 kB)]
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Inhomogeneities in plastically deformed silicon single crystals. I. ESR and photo-ESR investigations of p- and n-doped silicon
C. Kisielowski, J. Palm, B. Bollig, and H. Alexander
pp. 1588-1599 [View Page Images or PDF (1,954 kB)]
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Inhomogeneities in plastically deformed silicon single crystals. II. Deep-level transient spectroscopy investigations of p- and n-doped silicon
C. Kisielowski and E. R. Weber
pp. 1600-1612 [View Page Images or PDF (2,123 kB)]
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Variation of the energy gap with composition in AIBIIIC2VI chalcopyrite-structure alloys
Tibaire Tinoco, Miguel Quintero, and Carlos Rincón
pp. 1613-1615 [View Page Images or PDF (433 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Evaluation of SiO2/(001)Si interface roughness using high-resolution transmission electron microscopy and simulation
Hiroyuki Akatsu, Yasuyuki Sumi, and Iwao Ohdomari
pp. 1616-1621 [View Page Images or PDF (1,345 kB)]
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Structure at the Yb/GaAs interface studied by anomalous x-ray scattering
K. Akimoto, K. Hirose, and J. Mizuki
pp. 1622-1627 [View Page Images or PDF (601 kB)]
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Theory of the small photocarrier grating under the application of an electric field
I. Balberg
pp. 1628-1645 [View Page Images or PDF (3,283 kB)]
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Theory of Coulomb-blockade oscillations in the conductance of a quantum dot
C. W. J. Beenakker
pp. 1646-1656 [View Page Images or PDF (1,656 kB)]
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Influence of Coulomb repulsion on the Aharonov-Bohm effect in a quantum dot
C. W. J. Beenakker, H. van Houten, and A. A. M. Staring
pp. 1657-1662 [View Page Images or PDF (1,010 kB)]
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Strain energy and stability of Si-Ge compounds, alloys, and superlattices
James E. Bernard and Alex Zunger
pp. 1663-1681 [View Page Images or PDF (3,570 kB)]
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Persistent currents in mesoscopic rings, conductance, and boundary conditions
Hélène Bouchiat, Gilles Montambaux, and David Sigeti
pp. 1682-1691 [View Page Images or PDF (1,274 kB)]
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Many-body effects of a dense two-dimensional electron-hole system in a strained InxGa1-xAs quantum well
L. V. Butov, V. D. Kulakovskii, and T. G. Andersson
pp. 1692-1698 [View Page Images or PDF (1,244 kB)]
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Photoinduced oxidation of InP(110) with condensed O2 at 25 K
Y. Chen, J. M. Seo, Steven G. Anderson, and J. H. Weaver
pp. 1699-1706 [View Page Images or PDF (1,509 kB)]
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Electronic structure of ZnS/ZnSe superlattices
N. E. Christensen and I. Gorczyca
pp. 1707-1716 [View Page Images or PDF (1,788 kB)]
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Subband structure in the electric quantum limit for Hg1-xCdxTe
J. H. Chu, Z. Y. Mi, R. Sizmann, and F. Koch
pp. 1717-1723 [View Page Images or PDF (874 kB)]
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Theoretical calculation of the electron-capture cross section due to a dangling bond at the Si(111)-SiO2 interface
Didier Goguenheim and Michel Lannoo
pp. 1724-1733 [View Page Images or PDF (1,346 kB)]
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Strain effect on band offsets at pseudomorphic InAs/GaAs heterointerfaces characterized by x-ray photoemission spectroscopy
K. Hirakawa, Y. Hashimoto, K. Harada, and T. Ikoma
pp. 1734-1740 [View Page Images or PDF (1,077 kB)]
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Ab initio studies of silane decomposition on Si(100)
Ze Jing and Jerry L. Whitten
pp. 1741-1746 [View Page Images or PDF (978 kB)]
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Evolution of the quantized ballistic conductance with increasing disorder in narrow-wire arrays
Arvind Kumar and Philip F. Bagwell
pp. 1747-1753 [View Page Images or PDF (1,208 kB)]
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Magneto-optical study of donor-level crossing in tipped GaAs/(Ga,Al)As quantum wells
E. R. Mueller, W. D. Goodhue, D. M. Larsen, J. W. Bales, and J. Waldman
pp. 1754-1761 [View Page Images or PDF (1,377 kB)]
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Bulk and surface electronic structure of ZnSe(110)
H. Qu, J. Kanski, P. O. Nilsson, and U. O. Karlsson
pp. 1762-1766 [View Page Images or PDF (812 kB)]
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Use of a two-frequency ac bridge to measure 1/f noise in copper films
K. P. Rodbell and R. H. Koch
pp. 1767-1771 [View Page Images or PDF (808 kB)]
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Structural stability of short-period Si/Ge superlattices studied with Raman spectroscopy
R. Schorer, E. Friess, K. Eberl, and G. Abstreiter
pp. 1772-1781 [View Page Images or PDF (1,544 kB)]
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Optical characteristics of excitons in In1-xGaxAsyP1-y/InP quantum wells
M. Sugawara, T. Fujii, S. Yamazaki, and K. Nakajima
pp. 1782-1791 [View Page Images or PDF (1,717 kB)]
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Conductance fluctuations in quantum wires
H. Tamura and T. Ando
pp. 1792-1800 [View Page Images or PDF (1,428 kB)]
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Type conversion under hydrostatic pressure in ZnSe-ZnS strained-layer superlattices
Yoichi Yamada, Yasuaki Masumoto, Tsunemasa Taguchi, and Kenichi Takemura
pp. 1801-1805 [View Page Images or PDF (720 kB)]
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Resonant tunneling via microcrystalline-silicon quantum confinement
Qiu-yi Ye, Raphael Tsu, and Edward H. Nicollian
pp. 1806-1811 [View Page Images or PDF (1,009 kB)]
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Defects in oxygen-implanted silicon-on-insulator structures probed with positrons
Bent Nielsen, K. G. Lynn, T. C. Leung, B. F. Cordts, and S. Seraphin
pp. 1812-1816 [View Page Images or PDF (1,590 kB)]
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Initial stages of oxidation of Ge(111)-c(2×8) studied by scanning tunneling microscopy
T. Klitsner, R. S. Becker, and J. S. Vickers
pp. 1817-1824 [View Page Images or PDF (3,817 kB)]
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Surface local-field effect on the optical properties of GaAs(110) and GaP(110)
C. M. J. Wijers, R. Del Sole, and F. Manghi
pp. 1825-1831 [View Page Images or PDF (1,103 kB)]
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Interaction of H and H2 with the silicon dangling orbital at the 〈111〉 Si/SiO2 interface
Arthur H. Edwards
pp. 1832-1838 [View Page Images or PDF (1,295 kB)]
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Binding energy of excitons to neutral donors in In0.1Ga0.9As/GaAs quantum wells
D. C. Reynolds, K. R. Evans, C. E. Stutz, and P. W. Yu
pp. 1839-1843 [View Page Images or PDF (701 kB)]
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Calculation of the mobility of two-dimensional excitons in a GaAs/AlxGa1-xAs quantum well
P. K. Basu and Partha Ray
pp. 1844-1849 [View Page Images or PDF (1,001 kB)]
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Electron-phonon interaction and electron scattering by modified confined LO phonons in semiconductor quantum wells
R. Haupt and L. Wendler
pp. 1850-1860 [View Page Images or PDF (1,485 kB)]
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Hydrogen segregation and trapping in the Al/Si(111) interface
Joyce C. Liu, A. D. Marwick, and F. K. LeGoues
pp. 1861-1874 [View Page Images or PDF (2,687 kB)]

Surface physics, low-dimensional systems, and related topics

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Determination of the Cu(110)-c(6×2)-O structure by x-ray diffraction
Robert Feidenhans’l, Francois Grey, Robert L. Johnson, and Mourits Nielsen
pp. 1875-1879 [View Page Images or PDF (878 kB)]
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Surface phonons in thin aluminum oxide films: Thickness, beam-energy, and symmetry-mixing effects
B. G. Frederick, G. Apai, and T. N. Rhodin
pp. 1880-1890 [View Page Images or PDF (1,965 kB)]
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Ag deposition onto Xe: Clustering, incorporation, and surface attraction
T. R. Ohno, J. C. Patrin, U. S. Ayyala, and J. H. Weaver
pp. 1891-1895 [View Page Images or PDF (1,006 kB)]
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Many-body calculation of the valence photoemission spectrum of NiN2
M. Ohno and W. von Niessen
pp. 1896-1903 [View Page Images or PDF (1,538 kB)]
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Angle-resolved photoemission investigation of the (2×1) carbidic carbon on Ni(110)
L. Papagno, M. Conti, L. S. Caputi, J. Anderson, and G. J. Lapeyre
pp. 1904-1909 [View Page Images or PDF (836 kB)]
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Theoretical study of the CO interaction with the Fe(100) surface
A. C. Pavo, M. Braga, C. A. Taft, B. L. Hammond, and W. A. Lester, Jr.
pp. 1910-1913 [View Page Images or PDF (559 kB)]

BRIEF REPORTS

Surface physics, low-dimensional systems, and related topics

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Formation of sulfur clusters on Re(0001) surfaces observed with the scanning tunneling microscope
R. Q. Hwang, D. M. Zeglinski, A. Lopez Vazquez-de-Parga, D. F. Ogletree, G. A. Somorjai, M. Salmeron, and D. R. Denley
pp. 1914-1917 [View Page Images or PDF (1,471 kB)]

Semiconductors I: bulk

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Theory of spin, orbital, and spin-orbit Knight shifts of 207Pb in n-type PbTe
R. L. Hota and G. S. Tripathi
pp. 1918-1921 [View Page Images or PDF (495 kB)]
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Dielectric susceptibility of III-V indium-compound semiconductors
T. Sahu, S. K. Nayak, and R. N. Acharya
pp. 1922-1925 [View Page Images or PDF (475 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Optical-phonon modes and Fröhlich potential in one-dimensional quantum-well wires
Bang-fen Zhu
pp. 1926-1929 [View Page Images or PDF (715 kB)]

RAPID COMMUNICATIONS

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Anisotropic optical properties of (110)-oriented quantum wells
D. Gershoni, I. Brener, G. A. Baraff, S. N. G. Chu, L. N. Pfeiffer, and K. West
pp. 1930-1933 [View Page Images or PDF (905 kB)]
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Interplay between Landau and Stark quantizations in GaAs/Ga0.65Al0.35As superlattices
A. Alexandrou, E. E. Mendez, and J. M. Hong
pp. 1934-1937 [View Page Images or PDF (736 kB)]
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Noise and reproducible structure in a GaAs/AlxGa1-xAs one-dimensional channel
D. H. Cobden, N. K. Patel, M. Pepper, D. A. Ritchie, J. E. F. Frost, and G. A. C. Jones
pp. 1938-1941 [View Page Images or PDF (763 kB)]
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Valence-band coupling in thin (Ga,In)As-AlAs strained quantum wells
Bernard Gil, Pierre Lefebvre, Philippe Boring, Karen J. Moore, Geoffrey Duggan, and Karl Woodbridge
pp. 1942-1945 [View Page Images or PDF (637 kB)]
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Dynamical response of a two-dimensional electron system in a strong magnetic field
I. M. Grodnensky, D. Heitmann, K. von Klitzing, and A. Yu. Kamaev
pp. 1946-1949 [View Page Images or PDF (637 kB)]
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Ideal unreconstructed hydrogen termination of the Si(111) surface obtained by hydrogen exposure of the √3 × √3 -In surface
E. Landemark, C. J. Karlsson, and R. I. G. Uhrberg
pp. 1950-1953 [View Page Images or PDF (755 kB)]
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NH3 and NO interaction with Si(100)-(2×1) surfaces
G. Rangelov, J. Stober, B. Eisenhut, and Th. Fauster
pp. 1954-1957 [View Page Images or PDF (691 kB)]
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Anisotropic empty electron-band states at the pseudo-5×5 Si(111)/Cu interface
Massimo Sancrotti, Maurizio Sacchi, Oumar Sakho, and Giorgio Rossi
pp. 1958-1961 [View Page Images or PDF (602 kB)]

Surface physics, low-dimensional systems, and related topics

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Electronic states of solid C60: Symmetries and photoionization cross sections
P. J. Benning, D. M. Poirier, N. Troullier, José Luriaas Martins, J. H. Weaver, R. E. Haufler, L. P. F. Chibante, and R. E. Smalley
pp. 1962-1965 [View Page Images or PDF (619 kB)]
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Band dispersion and empty electronic states in solid C60: Inverse photoemission and theory
M. B. Jost, N. Troullier, D. M. Poirier, José Luís Martins, J. H. Weaver, L. P. F. Chibante, and R. E. Smalley
pp. 1966-1969 [View Page Images or PDF (749 kB)]
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Surface structure of the organic conductor β-(BEDT-TTF)2I3 observed by scanning tunneling microscopy [where BEDT-TTF is bis(ethylenedithio)tetrathiafulvalene]
Masamichi Yoshimura, Hidemi Shigekawa, Hideki Yamochi, Gunzi Saito, Yoshio Saito, and Akira Kawazu
pp. 1970-1972 [View Page Images or PDF (706 kB)]
 
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