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PROLA » Phys. Rev. B » Volume 45 » Issue 12
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Physical Review B – 15 March 1992
Volume 45, Issue 12

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Disorder in β’’-aluminas: Dielectric relaxation and x-ray absorption
M. L. denBoer, Y. S. Pak, K. J. Adamic, S. G. Greenbaum, M. C. Wintersgill, J. F. Lomax, J. J. Fontanella, B. Dunn, and G. C. Farrington
pp. 6369-6375 [View Page Images or PDF (968 kB)]
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Electronic-charge displacement around a stacking boundary in SiC polytypes
A. Qteish, Volker Heine, and R. J. Needs
pp. 6376-6382 [View Page Images or PDF (1,278 kB)]
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Electronic structure in incommensurate potentials obtained using a numerically accurate renormalization scheme
Riccardo Farchioni, Giuseppe Grosso, and Giuseppe Pastori Parravicini
pp. 6383-6389 [View Page Images or PDF (1,215 kB)]
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Valence and core-shakeup photoelectron spectra of solid polyacetylene and related free model molecules
M. P. Keane, A. Naves de Brito, N. Correia, S. Svensson, L. Karlsson, B. Wannberg, U. Gelius, Sten Lunell, W. R. Salaneck, M. Lögdlund, D. B. Swanson, and A. G. MacDiarmid
pp. 6390-6399 [View Page Images or PDF (1,553 kB)]
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Electronic properties and multifractality of a one-dimensional hierarchical system in the presence of an electric field
G. Y. Oh, C. S. Ryu, and M. H. Lee
pp. 6400-6407 [View Page Images or PDF (1,249 kB)]
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Two-band model for halogen-bridged mixed-valence transition-metal complexes. I. Ground state and excitation spectrum
J. Tinka Gammel, A. Saxena, I. Batistić, A. R. Bishop, and S. R. Phillpot
pp. 6408-6434 [View Page Images or PDF (4,723 kB)]
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Two-band model for halogen-bridged mixed-valence transition-metal complexes. II. Electron-electron correlations and quantum phonons
S. M. Weber-Milbrodt, J. Tinka Gammel, A. R. Bishop, and E. Y. Loh, Jr.
pp. 6435-6458 [View Page Images or PDF (4,027 kB)]
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Extension to the case of a magnetic field of Feynman’s path-integral upper bound on the ground-state energy: Application to the Fröhlich polaron
J. T. Devreese and F. Brosens
pp. 6459-6478 [View Page Images or PDF (2,537 kB)]
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Hubbard model in infinite dimensions
Antoine Georges and Gabriel Kotliar
pp. 6479-6483 [View Page Images or PDF (801 kB)]

Semiconductors I: bulk

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OH bonds in gallium arsenide grown by the liquid-encapsulated Czochralski crystal-growth method
Bernard Pajot and Chun-ying Song
pp. 6484-6491 [View Page Images or PDF (1,418 kB)]
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Hydrogenated Si clusters: Band formation with increasing size
Shang Yuan Ren and John D. Dow
pp. 6492-6496 [View Page Images or PDF (616 kB)]
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Mechanism of light-induced reactivation of acceptors in p-type hydrogenated gallium arsenide
I. Szafranek, M. Szafranek, and G. E. Stillman
pp. 6497-6508 [View Page Images or PDF (2,110 kB)]
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Transient time-resolved Raman scattering in semiconductors: Band-structure effects
C. Chia, Otto F. Sankey, and K. T. Tsen
pp. 6509-6516 [View Page Images or PDF (1,040 kB)]
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Environments of ion-implanted As and Ga impurities in amorphous silicon
G. N. Greaves, A. J. Dent, B. R. Dobson, S. Kalbitzer, S. Pizzini, and G. Müller
pp. 6517-6533 [View Page Images or PDF (2,619 kB)]
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Polarization, band lineups, and stability of SiC polytypes
A. Qteish, Volker Heine, and R. J. Needs
pp. 6534-6542 [View Page Images or PDF (1,647 kB)]
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Green’s-matrix calculation of total energies of point defects in silicon
P. J. Kelly and R. Car
pp. 6543-6563 [View Page Images or PDF (3,914 kB)]
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Hydrogen transport in amorphous silicon
W. B. Jackson and C. C. Tsai
pp. 6564-6580 [View Page Images or PDF (3,268 kB)]
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Effect of thermochemical reduction on the electrical, optical-absorption, and positron-annihilation characteristics of ZnO crystals
R. M. de la Cruz, R. Pareja, R. González, L. A. Boatner, and Y. Chen
pp. 6581-6586 [View Page Images or PDF (888 kB)]
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Raman scattering from CdSe microcrystals embedded in a germanate glass matrix
Akinori Tanaka, Seinosuke Onari, and Toshihiro Arai
pp. 6587-6592 [View Page Images or PDF (944 kB)]
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a-Si:H electron drift mobility measured under extremely high electric field
J. Kočka, O. Klíma, E. Šipek, C. E. Nebel, G. H. Bauer, G. Jurška, and M. Hoheisel
pp. 6593-6600 [View Page Images or PDF (1,277 kB)]
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Impurity-induced resonant Raman scattering
C. Trallero-Giner, A. Cantarero, M. Cardona, and M. Mora
pp. 6601-6613 [View Page Images or PDF (1,686 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Two-dimensional phase separation in In1-xGaxAsyP1-y epitaxial layers
T. L. McDevitt, S. Mahajan, D. E. Laughlin, W. A. Bonner, and V. G. Keramidas
pp. 6614-6622 [View Page Images or PDF (2,355 kB)]
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Dependence of thermally stimulated current on the wavelength of the excitation light found in tetracene films
Takao Sakurai
pp. 6623-6627 [View Page Images or PDF (753 kB)]
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Direct-band-gap structure of uniaxial-stressed SixGe1-x/Ge [111] strained-layer superlattices
Shang Yuan Ren, John D. Dow, and Gui-Lin Yang
pp. 6628-6636 [View Page Images or PDF (1,349 kB)]
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Valence-band splitting in ordered Ga0.5In0.5P studied by temperature-dependent photoluminescence polarization
Takashi Kanata, Masahiko Nishimoto, Hiroshi Nakayama, and Taneo Nishino
pp. 6637-6642 [View Page Images or PDF (925 kB)]
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Failure of extended-moment-equation approaches to describe ballistic transport in submicrometer structures
Maziar Nekovee, Bernard J. Geurts, Henk M. J. Boots, and Martin F. H. Schuurmans
pp. 6643-6651 [View Page Images or PDF (1,568 kB)]
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Quantum bound states in narrow ballistic channels with intersections
Zhen-Li Ji and Karl-Fredrik Berggren
pp. 6652-6658 [View Page Images or PDF (1,288 kB)]
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Hot-electron temperatures of two-dimensional electron gases using both de Haas–Shubnikov oscillations and the electron-electron interaction effect
R. Fletcher, J. J. Harris, C. T. Foxon, and R. Stoner
pp. 6659-6669 [View Page Images or PDF (1,664 kB)]
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Nonequilibrium Green’s-function method applied to double-barrier resonant-tunneling diodes
Roger Lake and Supriyo Datta
pp. 6670-6685 [View Page Images or PDF (2,686 kB)]
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Radiative recombination in GaAs/AlxGa1-xAs quantum wells
P. J. Bishop, M. E. Daniels, B. K. Ridley, and K. Woodbridge
pp. 6686-6691 [View Page Images or PDF (902 kB)]
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Surface core-level shifts on Ge(100): c(4×2) to 2×1 and 1×1 phase transitions
G. Le Lay, J. Kanski, P. O. Nilsson, U. O. Karlsson, and K. Hricovini
pp. 6692-6699 [View Page Images or PDF (1,291 kB)]
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CoSi2/Si(111) interface: Determination of the interfacial metal coordination number
J. Vrijmoeth, S. Zaima, E. Vlieg, and J. W. M. Frenken
pp. 6700-6708 [View Page Images or PDF (1,726 kB)]
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Quasi-two-dimensional electron system in a GaAs/AlxGa1-xAs heterojunction
Y. Fu, Q. Chen, M. Willander, and K. A. Chao
pp. 6709-6714 [View Page Images or PDF (936 kB)]
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Effect of an impurity in a quantum resonator
Y. Takagaki and D. K. Ferry
pp. 6715-6720 [View Page Images or PDF (905 kB)]
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Optical investigation of a very asymmetric double-barrier resonant-tunneling structure
C. R. H. White, M. S. Skolnick, L. Eaves, M. L. Leadbeater, M. Henini, O. H. Hughes, G. Hill, and M. A. Pate
pp. 6721-6730 [View Page Images or PDF (1,690 kB)]
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Theory of hot-electron magnetophonon resonance in quasi-two-dimensional quantum-well structures
Akira Suzuki
pp. 6731-6741 [View Page Images or PDF (1,849 kB)]
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Photoluminescence study of shallow acceptors in GaAs-Ga1-xAlxAs cylindrical quantum-well wires
A. Latgé, N. Porras-Montenegro, and Luiz E. Oliveira
pp. 6742-6746 [View Page Images or PDF (730 kB)]
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Microscopic calculation of the electron-phonon interaction in quantum wells
H. Rücker, E. Molinari, and P. Lugli
pp. 6747-6756 [View Page Images or PDF (1,533 kB)]
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Photoinduced resonant tunneling treated by an extended transfer Hamiltonian method
S. P. Apell and D. R. Penn
pp. 6757-6768 [View Page Images or PDF (1,512 kB)]
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Triply resonant Raman scattering via nonequilibrium phonons in GaAs quantum wells
Y. Liu, R. Sooryakumar, Emil S. Koteles, and B. Elman
pp. 6769-6775 [View Page Images or PDF (1,192 kB)]
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GaAs{001}(2×4) surface-structure studies with shadow-cone-enhanced secondary-ion mass spectrometry
C. Xu, K. P. Caffey, J. S. Burnham, S. H. Goss, B. J. Garrison, and N. Winograd
pp. 6776-6785 [View Page Images or PDF (1,482 kB)]
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Surface phonons of the hydrogen-terminated Si(111)(1×1) surface
Ch. Stuhlmann, G. Bogdányi, and H. Ibach
pp. 6786-6792 [View Page Images or PDF (1,206 kB)]
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Optical transitions in strained Ge/Si superlattices
U. Schmid, J. Humlíek, F. Luke, M. Cardona, H. Presting, H. Kibbel, E. Kasper, K. Eberl, W. Wegscheider, and G. Abstreiter
pp. 6793-6801 [View Page Images or PDF (1,493 kB)]
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Photoexcitations in polycarbazolyldiacetylenes
G. Dellepiane, C. Cuniberti, D. Comoretto, G. Lanzani, G. F. Musso, P. Piaggio, R. Tubino, A. Borghesi, C. Dell’Erba, G. Garbarino, and L. Moramarco
pp. 6802-6808 [View Page Images or PDF (1,036 kB)]
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Pressure dependence of the exciton absorption and the electronic subband structure of a Ga0.47In0.53As/Al0.48In0.52As multiple-quantum-well system
A. R. Goi, K. Syassen, Y. Zhang, K. Ploog, A. Cantarero, and A. Cros
pp. 6809-6818 [View Page Images or PDF (1,693 kB)]
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Semiconductor superlattice exciton states in crossed electric and magnetic fields
M. M. Dignam and J. E. Sipe
pp. 6819-6838 [View Page Images or PDF (3,467 kB)]
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Tight-binding model for hydrogen-silicon interactions
B. J. Min, Y. H. Lee, C. Z. Wang, C. T. Chan, and K. M. Ho
pp. 6839-6843 [View Page Images or PDF (781 kB)]

Surface physics, low-dimensional systems, and related topics

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Scanning-tunneling-microscope study of antiphase domain boundaries, dislocations, and local mass transport on Au(110) surfaces
J. K. Gimzewski, R. Berndt, and R. R. Schlittler
pp. 6844-6857 [View Page Images or PDF (4,174 kB)]
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Low-energy electron-diffraction profile analysis of reaction-induced substrate changes on Pt(110) during catalytic CO oxidation
J. Falta, R. Imbihl, M. Sander, and M. Henzler
pp. 6858-6867 [View Page Images or PDF (1,867 kB)]
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Effects of surface roughness on quasi-one-dimensional and -two-dimensional ballistic channels
Mizuho K. Schwalm and William A. Schwalm
pp. 6868-6876 [View Page Images or PDF (1,436 kB)]
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Deconstruction via adsorbate-driven ordering: O-W(001)
K. Grzelakowski, I. Lyuksyutov, and E. Bauer
pp. 6877-6882 [View Page Images or PDF (906 kB)]
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Raman-scattering and transmission-electron-microscopy studies of fluorine-intercalated graphite fibers CxF (7.8≥x≥2.9)
A. M. Rao, A. W. P. Fung, S. L. di Vittorio, M. S. Dresselhaus, G. Dresselhaus, M. Endo, K. Oshida, and T. Nakajima
pp. 6883-6892 [View Page Images or PDF (1,833 kB)]
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Theory of alkali-metal-induced reconstructions of fcc(100) surfaces
O. B. Christensen and K. W. Jacobsen
pp. 6893-6898 [View Page Images or PDF (893 kB)]
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C60 and C70 fullerenes and potassium fullerides
P. J. Benning, D. M. Poirier, T. R. Ohno, Y. Chen, M. B. Jost, F. Stepniak, G. H. Kroll, J. H. Weaver, J. Fure, and R. E. Smalley
pp. 6899-6913 [View Page Images or PDF (2,966 kB)]
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Mode softening and mode stiffening in C60 doped with alkali metals
R. A. Jishi and M. S. Dresselhaus
pp. 6914-6918 [View Page Images or PDF (884 kB)]
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Enhanced stabilization of C60 crystals through doping
Mark R. Pederson, Koblar A. Jackson, and L. L. Boyer
pp. 6919-6922 [View Page Images or PDF (832 kB)]
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Symmetry for lattice modes in C60 and alkali-metal-doped C60
G. Dresselhaus, M. S. Dresselhaus, and P. C. Eklund
pp. 6923-6930 [View Page Images or PDF (1,224 kB)]

BRIEF REPORTS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Correlation functions and dynamical properties of the one-dimensional Hubbard model
J. H. Xu and J. Yu
pp. 6931-6934 [View Page Images or PDF (634 kB)]
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Nonlocal exchange effects on the bulk plasmon dispersion relation
João da Providência, Jr. and Nuria Barberán
pp. 6935-6937 [View Page Images or PDF (431 kB)]

Semiconductors I: bulk

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Dependence of the phase-coherence time in CdS1-xSex on the laser pulse width
H. Schwab and C. Klingshirn
pp. 6938-6941 [View Page Images or PDF (678 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Magneto-optics of narrow GaAs/AlxGa1-xAs quantum wells grown on vicinal substrates
F. Meseguer, N. Mestres, J. Sa´nchez-Dehesa, C. Deparis, G. Neu, and J. Massies
pp. 6942-6945 [View Page Images or PDF (631 kB)]
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Tunneling spectroscopy across GaAs/AlxGa1-xAs interfaces at nanometer resolution
H. W. M. Salemink, O. Albrektsen, and P. Koenraad
pp. 6946-6949 [View Page Images or PDF (746 kB)]
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Simple formula for exciton binding energy in quantum wells with zero band offsets
Ian Galbraith
pp. 6950-6952 [View Page Images or PDF (379 kB)]

Surface physics, low-dimensional systems, and related topics

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Application of the Borrmann effect to x-ray monochromatization and to the overlayer versus substrate signal-ratio enhancement
S. Lagomarsino, G. Stefani, P. Castrucci, P. Letardi, F. Scarinci, G. Savelli, and A. Tebano
pp. 6953-6956 [View Page Images or PDF (746 kB)]

RAPID COMMUNICATIONS

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Suppression of ground-state optical recombination in the quantum Hall regime
M. Dahl, D. Heiman, A. Pinczuk, B. B. Goldberg, L. N. Pfeiffer, and K. W. West
pp. 6957-6960 [View Page Images or PDF (621 kB)]
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Dielectric confinement effect on excitons in PbI4-based layered semiconductors
X. Hong, T. Ishihara, and A. V. Nurmikko
pp. 6961-6964 [View Page Images or PDF (631 kB)]
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Dynamics of exciton relaxation in GaAs/AlxGa1-xAs quantum wells
Ph. Roussignol, C. Delalande, A. Vinattieri, L. Carraresi, and M. Colocci
pp. 6965-6968 [View Page Images or PDF (550 kB)]

Surface physics, low-dimensional systems, and related topics

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Alkali-metal–to–substrate charge transfer in TiO2(100)c(2×2)K
K. Prabhakaran, D. Purdie, R. Casanova, C. A. Muryn, P. J. Hardman, P. L. Wincott, and G. Thornton
pp. 6969-6972 [View Page Images or PDF (565 kB)]
 
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