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PROLA » Phys. Rev. B » Volume 46 » Issue 15
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Physical Review B – 15 October 1992
Volume 46, Issue 15

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Dynamical charge response function of the Hubbard model in the slave-boson approach
T. Li
pp. 9301-9311 [View Page Images or PDF (1,526 kB)]
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Fano effect studied with use of the recursion method
Virgilio Dolcher, Giuseppe Grosso, and Giuseppe Pastori Parravicini
pp. 9312-9319 [View Page Images or PDF (1,148 kB)]
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Polaron-pair generation in poly(phenylene vinylenes)
E. L. Frankevich, A. A. Lymarev, I. Sokolik, F. E. Karasz, S. Blumstengel, R. H. Baughman, and H. H. Hörhold
pp. 9320-9324 [View Page Images or PDF (785 kB)]
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Conductivity of a Luttinger liquid
T. Giamarchi and A. J. Millis
pp. 9325-9331 [View Page Images or PDF (1,167 kB)]
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Electronic structure of the layered nitride LiMoN2
D. J. Singh
pp. 9332-9335 [View Page Images or PDF (551 kB)]
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Resonant photoemission at the Ni 2p core level as a probe of electron correlation effects in nickel
G. van der Laan, M. Surman, M. A. Hoyland, C. F. J. Flipse, B. T. Thole, Y. Seino, H. Ogasawara, and A. Kotani
pp. 9336-9340 [View Page Images or PDF (803 kB)]
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Neutron-scattering studies on CeM2Ge2(M=Ag, Au, and Ru)
A. Loidl, K. Knorr, G. Knopp, A. Krimmel, R. Caspary, A. Böhm, G. Sparn, C. Geibel, F. Steglich, and A. P. Murani
pp. 9341-9351 [View Page Images or PDF (1,684 kB)]
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Relativistic-multiple-scattering theory for space-filling potentials
Xindong Wang, X.-G. Zhang, W. H. Butler, G. M. Stocks, and B. N. Harmon
pp. 9352-9358 [View Page Images or PDF (1,167 kB)]
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Models with inverse-square exchange
Z. N. C. Ha and F. D. M. Haldane
pp. 9359-9368 [View Page Images or PDF (1,236 kB)]
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Electronic surface excitations of cavities in metals
Ll. Serra, F. Garcías, J. Navarro, N. Barberán, M. Barranco, and M. Pi
pp. 9369-9379 [View Page Images or PDF (1,851 kB)]
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Theory and experiment on the optical properties of CrSi2
V. Bellani, G. Guizzetti, F. Marabelli, A. Piaggi, A. Borghesi, F. Nava, V. N. Antonov, Vl. N. Antonov, O. Jepsen, O. K. Andersen, and V. V. Nemoshkalenko
pp. 9380-9389 [View Page Images or PDF (1,821 kB)]

Semiconductors I: bulk

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Carrier kinetics and electron–polar-optical-phonon interaction in ZnSe studied by optically detected cyclotron resonance
Tatsuya Tomaru, Tyuzi Ohyama, Eizo Otsuka, Minoru Isshiki, and Kenzo Igaki
pp. 9390-9399 [View Page Images or PDF (1,770 kB)]
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Self-interstitial bonding configurations in GaAs and Si
D. J. Chadi
pp. 9400-9407 [View Page Images or PDF (1,174 kB)]
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Vibronic Koster-Slater impurity: Exactly soluble model of deep levels in semiconductors
Va´clav Špička, Pavel Lipavsky´, and Bedřich Velicky´
pp. 9408-9418 [View Page Images or PDF (1,489 kB)]
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Low-temperature ac conductivity of adiabatic small-polaronic hopping in disordered systems
David Emin
pp. 9419-9427 [View Page Images or PDF (1,533 kB)]
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Electron-temperature concept at very high electric fields: A Monte Carlo study
H. M. J. Boots
pp. 9428-9433 [View Page Images or PDF (1,084 kB)]
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Extended x-ray-absorption fine-structure study of the local atomic structure in As+ heavily implanted silicon
J. L. Allain, J. R. Regnard, A. Bourret, A. Parisini, A. Armigliato, G. Tourillon, and S. Pizzini
pp. 9434-9445 [View Page Images or PDF (1,686 kB)]
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Soft-x-ray-emission studies of bulk Fe3Si, FeSi, and FeSi2, and implanted iron silicides
J. J. Jia, T. A. Callcott, W. L. O’Brien, Q. Y. Dong, D. R. Mueller, D. L. Ederer, Z. Tan, and J. I. Budnick
pp. 9446-9451 [View Page Images or PDF (1,015 kB)]
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Binding energies of simple isoelectronic impurities in II-VI semiconductors
S. H. Sohn and Y. Hamakawa
pp. 9452-9460 [View Page Images or PDF (1,469 kB)]
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Exciton-polariton relaxation in ZnSe single crystals
F. Bogani, L. Carraresi, A. Filoramo, and S. Savasta
pp. 9461-9468 [View Page Images or PDF (1,355 kB)]
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Anisotropy of the conduction band of InSb: Orbital and spin properties
W. Zawadzki, I. T. Yoon, C. L. Littler, X. N. Song, and P. Pfeffer
pp. 9469-9475 [View Page Images or PDF (1,116 kB)]
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Complexes of oxygen and native defects in GaAs
M. Skowronski
pp. 9476-9481 [View Page Images or PDF (987 kB)]
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Transient photocharge measurements and electron emission from deep levels in undoped a-Si:H
Homer Antoniadis and E. A. Schiff
pp. 9482-9492 [View Page Images or PDF (1,951 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Linear-response formulation for mesoscopic systems with arbitrary interactions
Supriyo Datta
pp. 9493-9500 [View Page Images or PDF (1,145 kB)]
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Electrons confined on the surface of a sphere in a magnetic field
Ju H. Kim, I. D. Vagner, and B. Sundaram
pp. 9501-9504 [View Page Images or PDF (694 kB)]
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Gold-induced germanium crystallization
Zhengquan Tan, S. M. Heald, M. Rapposch, C. E. Bouldin, and J. C. Woicik
pp. 9505-9510 [View Page Images or PDF (1,070 kB)]
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Reduction of the thermopower in semiconducting point contacts
L. Weber, M. Lehr, and E. Gmelin
pp. 9511-9514 [View Page Images or PDF (808 kB)]
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Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions
M. Hayne, A. Usher, J. J. Harris, and C. T. Foxon
pp. 9515-9519 [View Page Images or PDF (837 kB)]
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Acetylene adsorption on Si(111)(7×7): A scanning-tunneling-microscopy study
J. Yoshinobu, D. Fukushi, M. Uda, E. Nomura, and M. Aono
pp. 9520-9524 [View Page Images or PDF (1,345 kB)]
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Optical study of extended-molecular-layer flat islands in lattice-matched In0.53Ga0.47As/InP and In0.53Ga0.47As/In1-xGaxAsyP1-y quantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles
R. Sauer, S. Nilsson, P. Roentgen, W. Heuberger, V. Graf, A. Hangleiter, and R. Spycher
pp. 9525-9537 [View Page Images or PDF (2,568 kB)]
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Resonant tunneling in coupled quantum dots
C. Y. Fong, J. S. Nelson, L. A. Hemstreet, R. F. Gallup, L. L. Chang, and L. Esaki
pp. 9538-9543 [View Page Images or PDF (958 kB)]
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Ab initio studies of H chemisorption on Si(100)
Z. Jing and J. L. Whitten
pp. 9544-9550 [View Page Images or PDF (1,047 kB)]
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Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films of InxGa1-xAs on GaAs(100)
C. W. Snyder, J. F. Mansfield, and B. G. Orr
pp. 9551-9554 [View Page Images or PDF (892 kB)]
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Single-electron thermionic-emission oscillations in p-n microjunctions
A. Imamog¯lu, Y. Yamamoto, and P. Solomon
pp. 9555-9563 [View Page Images or PDF (1,315 kB)]
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Symmetry-dependent localization in a finite superlattice
G. Ihm, M. L. Falk, S. K. Noh, and S. J. Lee
pp. 9564-9568 [View Page Images or PDF (728 kB)]
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Theory of the excitonic optical Stark effect in quasi-one-dimensional semiconductor quantum wires
Nguyen Ba An and Hartmut Haug
pp. 9569-9576 [View Page Images or PDF (926 kB)]
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Time evolution of perturbed Landau functions and quantization of the Hall conductance
D. Bicout, P.-A. Hervieux, and J. Riess
pp. 9577-9585 [View Page Images or PDF (1,423 kB)]
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Paired Hall states in double-layer electron systems
Martin Greiter, X. G. Wen, and Frank Wilczek
pp. 9586-9589 [View Page Images or PDF (666 kB)]
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Microscopic model for dimer buckling on Si(001)
Frank H. Stillinger
pp. 9590-9594 [View Page Images or PDF (738 kB)]
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Theory of light-induced drift of electrons in coupled quantum wells
Mark I. Stockman, Leonid S. Muratov, and Thomas F. George
pp. 9595-9602 [View Page Images or PDF (1,366 kB)]
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Localization and magnetic field in a quasi-one-dimensional conductor
Nicolas Dupuis and Gilles Montambaux
pp. 9603-9619 [View Page Images or PDF (2,688 kB)]
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Classical theory for shot noise in resonant tunneling
John H. Davies, Per Hyldgaard, Selman Hershfield, and John W. Wilkins
pp. 9620-9633 [View Page Images or PDF (2,468 kB)]
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Influence of the envelope function on the ground-state energy of quasi-two-dimensional Wigner solids
N. M. Fujiki and D. J. W. Geldart
pp. 9634-9640 [View Page Images or PDF (906 kB)]
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Heterojunction band offsets for polar interfaces: From a thin to a thick covalent intralayer
A. Mujica, R. Pérez, F. Flores, and A. Muñoz
pp. 9641-9647 [View Page Images or PDF (1,009 kB)]
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Experimental measurement of scattering coefficients in mesoscopic conductors
K. L. Shepard, M. L. Roukes, and B. P. van der Gaag
pp. 9648-9666 [View Page Images or PDF (3,250 kB)]
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Theory of the thermopower of a quantum dot
C. W. J. Beenakker and A. A. M. Staring
pp. 9667-9676 [View Page Images or PDF (1,393 kB)]
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Tight-binding molecular-dynamics study of the hydrogen vibration spectrum on a Si(111) surface
B. J. Min, Y. H. Lee, C. Z. Wang, C. T. Chan, and K. M. Ho
pp. 9677-9682 [View Page Images or PDF (1,020 kB)]

Surface physics, low-dimensional systems, and related topics

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Metastable-atom desorption and luminescence stimulated by low-energy electron impact on condensed Kr, Xe, and Xe/Kr films
A. Mann, G. Leclerc, and L. Sanche
pp. 9683-9690 [View Page Images or PDF (1,465 kB)]
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Image states on Co(0001) and Fe(110) probed by two-photon photoemission
R. Fischer, N. Fischer, S. Schuppler, Th. Fauster, and F. J. Himpsel
pp. 9691-9693 [View Page Images or PDF (565 kB)]
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Atomic structure of a Gd(0001) surface
J. Quinn, Y. S. Li, F. Jona, and D. Fort
pp. 9694-9699 [View Page Images or PDF (881 kB)]
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Molecular-dynamics simulations of atomic-scale friction of diamond surfaces
J. A. Harrison, C. T. White, R. J. Colton, and D. W. Brenner
pp. 9700-9708 [View Page Images or PDF (1,564 kB)]
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Magnetic-closure domains and interpretation of spin-resolved electron spectroscopies
K. Starke, K. Ertl, and V. Dose
pp. 9709-9718 [View Page Images or PDF (2,034 kB)]
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Electronic structure of Cu(100), Ag(100), Au(100), and Cu3Au(100) from inverse photoemission
F. J. Himpsel and J. E. Ortega
pp. 9719-9723 [View Page Images or PDF (728 kB)]
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NiO(100) valence-band density of states during hydrogen reduction
K. W. Wulser, B. P. Hearty, and M. A. Langell
pp. 9724-9731 [View Page Images or PDF (1,436 kB)]
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Optical second-harmonic diffraction study of anisotropic surface diffusion: CO on Ni(110)
Xu-Dong Xiao, X. D. Zhu, W. Daum, and Y. R. Shen
pp. 9732-9743 [View Page Images or PDF (2,122 kB)]
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Valence-band x-ray photoemission from Ir(001) with high angular resolution and high-energy resolution
L. E. Klebanoff and D. G. Van Campen
pp. 9744-9750 [View Page Images or PDF (1,117 kB)]
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Optical resonances in bimetallic clusters and their relation to the electronic structure
C. Yannouleas, P. Jena, and S. N. Khanna
pp. 9751-9760 [View Page Images or PDF (1,745 kB)]
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Structure and dynamics of C60 and C70 from tight-binding molecular dynamics
C. Z. Wang, C. T. Chan, and K. M. Ho
pp. 9761-9767 [View Page Images or PDF (825 kB)]

BRIEF REPORTS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Ab initio study of a grain boundary in gold
M. Needels, A. M. Rappe, P. D. Bristowe, and J. D. Joannopoulos
pp. 9768-9771 [View Page Images or PDF (607 kB)]

Semiconductors I: bulk

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Nonexponential photoionization of DX centers in Si-doped AlxGa1-xAs
Z. Su and J. W. Farmer
pp. 9772-9775 [View Page Images or PDF (711 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Quantum Hall effect in a triple-layer electron system
J. Jo, Y. W. Suen, L. W. Engel, M. B. Santos, and M. Shayegan
pp. 9776-9779 [View Page Images or PDF (698 kB)]
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Hydrogenic impurities in GaAs-(Ga,Al)As quantum dots
N. Porras-Montenegro and S. T. Pe´rez-Merchancano
pp. 9780-9783 [View Page Images or PDF (591 kB)]
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Effect of inelastic processes on the elastic width in resonant structures
Gastón García-Calderón and Alberto Rubio
pp. 9784-9787 [View Page Images or PDF (754 kB)]
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Effect of the electron Coulomb potential on hole confinement in II-VI quantum wells
A. V. Kavokin, V. P. Kochereshko, G. R. Posina, I. N. Uraltsev, D. R. Yakovlev, G. Landwehr, R. N. Bicknell-Tassius, and A. Waag
pp. 9788-9791 [View Page Images or PDF (721 kB)]
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Limitations of the thermally stimulated conductivity as a technique for studying the density of states of a-Si:H
J.-H. Zhou and S. R. Elliott
pp. 9792-9795 [View Page Images or PDF (663 kB)]
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Enhancement of resistance anomalies by diffuse boundary scattering in multiprobe ballistic conductors
R. J. Blaikie, K. Nakazato, J. R. A. Cleaver, and H. Ahmed
pp. 9796-9799 [View Page Images or PDF (708 kB)]
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Observation of resonant inter-Landau-level tunneling in a superlattice
W. Müller, H. T. Grahn, R. J. Haug, and K. Ploog
pp. 9800-9803 [View Page Images or PDF (734 kB)]
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Quantization effects on magnetoplasmons in quantum wells
Lihong Wang, Fanan Zeng, Shechao Feng, and Yun Zhu
pp. 9804-9807 [View Page Images or PDF (775 kB)]

Surface physics, low-dimensional systems, and related topics

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Overlayer-induced resonant electronic states: A theoretical study
A. Akjouj, L. Dobrzynski, and B. Djafari Rouhani
pp. 9808-9811 [View Page Images or PDF (607 kB)]
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Photodisintegration sum rule and electron distribution in metal clusters
Vitaly V. Kresin and E. Lipparini
pp. 9812-9814 [View Page Images or PDF (499 kB)]

COMMENTS

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Nonexistence of the solitary-wave solutions of the Sakuma-Nishiguchi equation
Sen-yue Lou
pp. 9815-9816 [View Page Images or PDF (281 kB)]

RAPID COMMUNICATIONS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Lattice-induced modulation of a charge-density wave far from commensurability
B. Burk and A. Zettl
pp. 9817-9820 [View Page Images or PDF (550 kB)]
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Fermi surface of UPt3 from 3 to 30 T: Field-induced quasiparticle band polarization and the metamagnetic transition
S. R. Julian, P. A. A. Teunissen, and S. A. J. Wiegers
pp. 9821-9824 [View Page Images or PDF (814 kB)]
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Possible occurrence of constrained chiral phase in the frustrated Heisenberg model
M. Di Stasio
pp. 9825-9828 [View Page Images or PDF (687 kB)]
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Use of gradient-corrected functionals in total-energy calculations for solids
Alberto García, Christian Elsässer, Jing Zhu, Steven G. Louie, and Marvin L. Cohen
pp. 9829-9832 [View Page Images or PDF (566 kB)]
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Charge-density-wave memory loss under ac bias in NbSe3
H. T. Hardner, A. C. Marley, M. B. Weissman, and R. E. Thorne
pp. 9833-9836 [View Page Images or PDF (734 kB)]
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Exact Phillips-Kleinman-like pseudopotential for transition metals
D. M. Bylander and Leonard Kleinman
pp. 9837-9840 [View Page Images or PDF (791 kB)]
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Doping-induced changes in the electronic structure of LaxSr1-xTiO3: Limitation of the one-electron rigid-band model and the Hubbard model
A. Fujimori, I. Hase, M. Nakamura, H. Namatame, Y. Fujishima, Y. Tokura, M. Abbate, F. M. F. de Groot, M. T. Czyzyk, J. C. Fuggle, O. Strebel, F. Lopez, M. Domke, and G. Kaindl
pp. 9841-9844 [View Page Images or PDF (632 kB)]
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Giant crystal field and ferromagnetism in the Kondo system CeRh3B2: Soft-x-ray linear-dichroism study
K. Yamaguchi, H. Namatame, I. Hase, A. Fujimori, A. Misu, M. Kasaya, and T. Kasuya
pp. 9845-9848 [View Page Images or PDF (614 kB)]

Semiconductors I: bulk

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Antiferromagnetic ordering of defects in GaAs
H. J. Bornemann, W. Walukiewicz, and D. E. Bliss
pp. 9849-9852 [View Page Images or PDF (598 kB)]
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Wigner-Seitz approach to spin splitting
C. Benoit à la Guillaume, D. Scalbert, and T. Dietl
pp. 9853-9856 [View Page Images or PDF (653 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Time-of-flight spectroscopy of electron transport in superlattices: From band transport to Stark localization
G. Cohen and I. Bar-Joseph
pp. 9857-9860 [View Page Images or PDF (780 kB)]
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Density dependence of the electron-hole plasma lifetime in semiconductor quantum wells
G. Bongiovanni and J. L. Staehli
pp. 9861-9864 [View Page Images or PDF (904 kB)]
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Intrinsic and extrinsic effects in surfaces: Acoustic-phonon softening of capped Si(111) surfaces
P. Santini, P. Ruggerone, L. Miglio, and R. B. Doak
pp. 9865-9868 [View Page Images or PDF (707 kB)]
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Extended x-ray-absorption fine-structure determination of bond-length conservation at the clean InP(110) surface
J. C. Woicik, T. Kendelewicz, K. E. Miyano, M. Richter, C. E. Bouldin, P. Pianetta, and W. E. Spicer
pp. 9869-9872 [View Page Images or PDF (555 kB)]
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Influence of exciton localization on recombination line shapes: InxGa1-xAs/GaAs quantum wells as a model
R. F. Schnabel, R. Zimmermann, D. Bimberg, H. Nickel, R. Lösch, and W. Schlapp
pp. 9873-9876 [View Page Images or PDF (787 kB)]
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Localization at high magnetic fields in GaAs/AlxGa1-xAs quantum wires
R. G. Mani and K. v. Klitzing
pp. 9877-9880 [View Page Images or PDF (772 kB)]
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Precise measurements of the gap energy of folded acoustic phonons in Si/Si1-xGex superlattices
P. X. Zhang, D. J. Lockwood, H. J. Labbé, and J.-M. Baribeau
pp. 9881-9884 [View Page Images or PDF (691 kB)]
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Lateral-superlattice effect on weak localization in silicon inversion layers
J. R. Gao, C. de Graaf, A. S. Schüssler, J. Caro, S. Radelaar, and K. Heyers
pp. 9885-9888 [View Page Images or PDF (728 kB)]
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Metallic phase of the quantum Hall system at even-denominator filling fractions
Vadim Kalmeyer and Shou-Cheng Zhang
pp. 9889-9892 [View Page Images or PDF (565 kB)]

Surface physics, low-dimensional systems, and related topics

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Spin correlation in Auger neutralization of He+ ions at a Cu(100) surface
D. M. Oro´, Q. Lin, P. A. Soletsky, X. Zhang, F. B. Dunning, and G. K. Walters
pp. 9893-9896 [View Page Images or PDF (616 kB)]
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Linear approximation to dynamical low-energy electron diffraction
A. Wander, J. B. Pendry, and M. A. Van Hove
pp. 9897-9899 [View Page Images or PDF (501 kB)]
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Observation of photorefractivity in a fullerene-doped polymer composite
Yue Zhang, Yiping Cui, and Paras N. Prasad
pp. 9900-9902 [View Page Images or PDF (451 kB)]
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Diamond from fullerenes: Evidence from Raman measurements
M. Núñez Regueiro, L. Abello, G. Lucazeau, and J-L. Hodeau
pp. 9903-9905 [View Page Images or PDF (413 kB)]
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Ground states of large icosahedral fullerenes
Riichiro Saito, G. Dresselhaus, and M. S. Dresselhaus
pp. 9906-9909 [View Page Images or PDF (808 kB)]
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Electronic and optical properties of the Vanderbilt-Tersoff model of negative-curvature fullerene
W. Y. Ching, Ming-Zhu Huang, and Yong-nian Xu
pp. 9910-9912 [View Page Images or PDF (541 kB)]

ERRATA

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Erratum: Eight-band k⋅p model of strained zinc-blende crystals [Phys. Rev. B 41, 11 992 (1990)]
Thomas B. Bahder
pp. 9913 [View Page Images or PDF (64 kB)]
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Erratum: Model for longitudinal-optical phonons and electron-phonon coupling in GaAs-Ga1-xAlxAs multilayer structures
C. Guillemot and F. Clérot
pp. 9914 [View Page Images or PDF (65 kB)]
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Erratum: Structure and restructuring of the atomic steps on Si(111)7×7
H. Tochihara, W. Shimada, M. Itoh, H. Tanaka, M. Udagawa, and I. Sumita
pp. 9914 [View Page Images or PDF (65 kB)]
 
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