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PROLA » Phys. Rev. B » Volume 46 » Issue 20
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Physical Review B – 15 November 1992
Volume 46, Issue 20

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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X-ray-scattering determination of the dynamic structure factor of Al metal
P. M. Platzman, E. D. Isaacs, H. Williams, P. Zschack, and G. E. Ice
pp. 12943-12946 [View Page Images or PDF (636 kB)]
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Pair-distribution function and its coupling-constant average for the spin-polarized electron gas
John P. Perdew and Yue Wang
pp. 12947-12954 [View Page Images or PDF (917 kB)]
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Dielectric constant of a suspension of uniform spheres
K. Hinsen and B. U. Felderhof
pp. 12955-12963 [View Page Images or PDF (1,225 kB)]
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Defect energetics in MgO treated by first-principles methods
A. De Vita, M. J. Gillan, J. S. Lin, M. C. Payne, I. Štich, and L. J. Clarke
pp. 12964-12973 [View Page Images or PDF (2,011 kB)]
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Toward a magnetic description of metals in terms of interstitial molecular orbitals. II. One-dimensional infinite system: The lithium chain
M. B. Lepetit, E. Aprà, J. P. Malrieu, and R. Dovesi
pp. 12974-12980 [View Page Images or PDF (1,173 kB)]
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Calculations of crystal-structure stabilities of Ce under pressure
Olle Eriksson, J. M. Wills, and A. M. Boring
pp. 12981-12989 [View Page Images or PDF (1,550 kB)]
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Ab initio simulations of sodium using time-dependent density-functional theory
Joachim Theilhaber
pp. 12990-13003 [View Page Images or PDF (2,158 kB)]
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Photoemission studies of the Fe 3s spin splitting in Fe-V alloys
S. L. Qiu, R. G. Jordan, A. M. Begley, X. Wang, Y. Liu, and M. W. Ruckman
pp. 13004-13007 [View Page Images or PDF (622 kB)]
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Optical excitations of poly-3-alkylthiophene films and solutions
C. Botta, S. Luzzati, R. Tubino, and A. Borghesi
pp. 13008-13016 [View Page Images or PDF (1,489 kB)]
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Multiple-photon absorption and saturation in Frenkel-exciton chains
Frank C. Spano
pp. 13017-13034 [View Page Images or PDF (3,125 kB)]
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Transient nonlinear optical phenomena in exciton-phonon systems
X. Li, D. L. Lin, Thomas F. George, and Xin Sun
pp. 13035-13041 [View Page Images or PDF (927 kB)]
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Static dielectric response of charged bosons
G. Sugiyama, C. Bowen, and B. J. Alder
pp. 13042-13050 [View Page Images or PDF (1,306 kB)]
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Self-energy of ferromagnetic nickel in the GW approximation
F. Aryasetiawan
pp. 13051-13064 [View Page Images or PDF (2,374 kB)]
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Projector-basis technique and Car-Parrinello scaling in mixed-basis, linearized-augmented-plane-wave, and extended linearized-augmented-plane-wave electronic-structure methods
D. J. Singh, H. Krakauer, C. Haas, and A. Y. Liu
pp. 13065-13072 [View Page Images or PDF (1,485 kB)]
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Tetragonal symmetry in the electron gas
S. Orozco, M. A. Ortíz, and R. M. Méndez-Moreno
pp. 13073-13077 [View Page Images or PDF (855 kB)]
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Localized and extended states in doped polyaniline: The effect of bond-length alternation
H. Dücker, M. Struck, Th. Koslowski, and W. von Niessen
pp. 13078-13081 [View Page Images or PDF (721 kB)]

Semiconductors I: bulk

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Numerical solution of coupled steady-state hot-phonon–hot-electron Boltzmann equations in InP
J. C. Vaissiere, J. P. Nougier, M. Fadel, L. Hlou, and P. Kocevar
pp. 13082-13099 [View Page Images or PDF (2,474 kB)]
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Effective temperature of hopping electrons in a strong electric field
S. Marianer and B. I. Shklovskii
pp. 13100-13103 [View Page Images or PDF (479 kB)]
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High-temperature positron diffusion in Si, GaAs, and Ge
E. Soininen, J. Mäkinen, D. Beyer, and P. Hautojärvi
pp. 13104-13118 [View Page Images or PDF (2,877 kB)]
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Atomic bonding in amorphous hydrogenated silicon carbide alloys: A statistical thermodynamic approach
H. Efstathiadis, Z. Yin, and F. W. Smith
pp. 13119-13130 [View Page Images or PDF (2,044 kB)]
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First-principles study of the atomic structure and local vibrational modes of the DX center in GaAs under pressure
B. H. Cheong and K. J. Chang
pp. 13131-13135 [View Page Images or PDF (740 kB)]
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Optical properties and dynamical behavior of localized and bound excitons in Cd1-xMnxTe (x=4%) grown by molecular-beam epitaxy
H. Akinaga, K. Takita, S. Sasaki, S. Takeyama, N. Miura, T. Nakayama, F. Minami, and K. Inoue
pp. 13136-13141 [View Page Images or PDF (991 kB)]
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Photoluminescence in deuterated highly doped GaAs(Zn)
P. de Mierry and M. Stutzmann
pp. 13142-13151 [View Page Images or PDF (1,588 kB)]
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Solution of a nonlinear Poisson’s equation for the potential of impurity ions in semiconductors with a spatially variable dielectric constant by an equivalent variational method
S. Noor Mohammad
pp. 13152-13156 [View Page Images or PDF (646 kB)]
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Vacancy-related centers in diamond
Gordon Davies, Simon C. Lawson, Alan T. Collins, Alison Mainwood, and Sarah J. Sharp
pp. 13157-13170 [View Page Images or PDF (2,499 kB)]
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Optical transitions in GaAs:Fe studied by Fourier-transform infrared spectroscopy
K. Pressel, G. Rückert, A. Dörnen, and K. Thonke
pp. 13171-13178 [View Page Images or PDF (1,321 kB)]
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Atomic configuration, stabilizing mechanism, and impurity vibrations of carbon-oxygen complexes in crystalline silicon
C. Kaneta, T. Sasaki, and H. Katayama-Yoshida
pp. 13179-13185 [View Page Images or PDF (1,266 kB)]
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Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors
A. M. Anile and S. Pennisi
pp. 13186-13193 [View Page Images or PDF (1,152 kB)]
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Picosecond carrier dynamics and studies of Auger recombination processes in indium arsenide at room temperature
K. L. Vodopyanov, H. Graener, C. C. Phillips, and T. J. Tate
pp. 13194-13200 [View Page Images or PDF (971 kB)]
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Bulk electronic structure of AlB2-type erbium disilicide with and without Si vacancies
L. Stauffer, C. Pirri, P. Wetzel, A. Mharchi, P. Paki, D. Bolmont, G. Gewinner, and C. Minot
pp. 13201-13206 [View Page Images or PDF (983 kB)]
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Fe2+ in GaP studied by Fourier-transform emission and absorption spectroscopy
G. Rückert, K. Pressel, A. Dörnen, K. Thonke, and W. Ulrici
pp. 13207-13214 [View Page Images or PDF (1,444 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Inelastic photoelectron diffraction from Si
E. Puppin, C. Carbone, and R. Rochow
pp. 13215-13219 [View Page Images or PDF (904 kB)]
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Analysis of the angular distribution of electrons injected through a quantum point contact by use of a Green’s function with a weak-magnetic-field approximation
Miyoshi Saito, Motomu Takatsu, Makoto Okada, and Naoki Yokoyama
pp. 13220-13233 [View Page Images or PDF (2,093 kB)]
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Excitonic spectrum of [111] GaAs/GaxAl1-xAs quantum wells
L. Viña, L. Muñoz, F. Calle, N. Mestres, J. M. Calleja, and W. I. Wang
pp. 13234-13243 [View Page Images or PDF (1,813 kB)]
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Pressure tuning of strains and piezoelectric fields in cubic superlattices and heterostructures: Linear effects
E. Anastassakis
pp. 13244-13253 [View Page Images or PDF (1,520 kB)]
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ac transport of one-dimensional hot electrons in GaAs and In0.53Ga0.47As quantum-well wires at low temperatures
Partha Pratim Basu, D. Chattopadhyay, and P. C. Rakshit
pp. 13254-13259 [View Page Images or PDF (874 kB)]
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Electronic structure of binary and ternary Ga or As oxides
E. A. Albanesi, S. J. Sferco, I. Lefebvre, G. Allan, and G. Hollinger
pp. 13260-13267 [View Page Images or PDF (1,241 kB)]
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Low-temperature exciton linewidth in short-period superlattices
Partha Ray and P. K. Basu
pp. 13268-13273 [View Page Images or PDF (804 kB)]
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Effects of various obstacles and tunneling disorder on the quantized conductance of an electron waveguide: Model of two coupled chains
Ben-yuan Gu, Chong-ru Huo, Zi-zhao Gan, Guo-zhen Yang, and Jian-qing Wang
pp. 13274-13288 [View Page Images or PDF (2,644 kB)]
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Electric field dependence of the propagation of quantum-well exciton polaritons in a waveguide structure
Kensuke Ogawa, Toshio Katsuyama, and Masahiko Kawata
pp. 13289-13292 [View Page Images or PDF (787 kB)]
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Geometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces
I. M. Vitomirov, A. Raisanen, A. C. Finnefrock, R. E. Viturro, L. J. Brillson, P. D. Kirchner, G. D. Pettit, and J. M. Woodall
pp. 13293-13302 [View Page Images or PDF (1,970 kB)]
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Metal-insulator transition in Si inversion layers in the extreme quantum limit
V. T. Dolgopolov, G. V. Kravchenko, A. A. Shashkin, and S. V. Kravchenko
pp. 13303-13308 [View Page Images or PDF (910 kB)]
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Hydrogen-induced variations of the ionization energy on GaAs(110) surfaces
T. U. Kampen and W. Mönch
pp. 13309-13312 [View Page Images or PDF (580 kB)]
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Electron power loss in AlxGa1-xAs/GaAs quantum wells at intermediate electron temperatures
A. J. Vickers
pp. 13313-13318 [View Page Images or PDF (709 kB)]
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Long-range interactions and the quantum Hall effect
S. L. Sondhi and S. A. Kivelson
pp. 13319-13325 [View Page Images or PDF (1,091 kB)]
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Observation of tunneling phenomena and the charging effect through small constricted regions in semiconductors fabricated with a focused ion beam at 4.2 K
Shunji Nakata
pp. 13326-13330 [View Page Images or PDF (712 kB)]
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Far-infrared investigation of band-structure parameters and exchange interaction in Pb1-xEuxTe films
G. Karczewski, J. K. Furdyna, D. L. Partin, C. N. Thrush, and J. P. Heremans
pp. 13331-13338 [View Page Images or PDF (1,470 kB)]
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Metallization-induced spontaneous silicide formation at room temperature: The Fe/Si case
J. M. Gallego, J. M. García, J. Alvarez, and R. Miranda
pp. 13339-13344 [View Page Images or PDF (958 kB)]
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Plasmaron excitation and band renormalization in a two-dimensional electron gas
Paul von Allmen
pp. 13345-13350 [View Page Images or PDF (899 kB)]
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Electron-electron interaction and intersubband absorption coefficient in a GaAs/AlxGa1-xAs quantum well
Paul von Allmen
pp. 13351-13356 [View Page Images or PDF (885 kB)]
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Magnetic-field enhancement of interface-phonon effects on quasi-two-dimensional magnetopolarons
R. Chen, D. L. Lin, M. Shukri, and C. Y. Chen
pp. 13357-13362 [View Page Images or PDF (651 kB)]
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Franz-Keldysh and band-filling effects in the electroreflectance of highly doped p-type GaAs
J. M. A. Gilman, A. Hamnett, and R. A. Batchelor
pp. 13363-13370 [View Page Images or PDF (1,446 kB)]
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Exciton photoluminescence in strained and unstrained ZnSe under hydrostatic pressure
Judah A. Tuchman, Sangsig Kim, Zhifeng Sui, and Irving P. Herman
pp. 13371-13378 [View Page Images or PDF (1,236 kB)]
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Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system
E. T. Yu, M. C. Phillips, D. H. Chow, D. A. Collins, M. W. Wang, J. O. McCaldin, and T. C. McGill
pp. 13379-13388 [View Page Images or PDF (1,658 kB)]
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Ideal interband absorption spectra in an indirect-gap-semiconductor quantum well
P. K. Basu and Sajal K. Paul
pp. 13389-13393 [View Page Images or PDF (627 kB)]
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Optically detected cyclotron resonance of GaAs quantum wells: Effective-mass measurements and offset effects
R. J. Warburton, J. G. Michels, R. J. Nicholas, J. J. Harris, and C. T. Foxon
pp. 13394-13399 [View Page Images or PDF (967 kB)]
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Mesoscopic fluctuations in the shot-noise power of metals
M. J. M. de Jong and C. W. J. Beenakker
pp. 13400-13406 [View Page Images or PDF (939 kB)]
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Accuracy of the electron pump
H. Dalsgaard Jensen and John M. Martinis
pp. 13407-13427 [View Page Images or PDF (3,476 kB)]
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Epitaxy on surfaces vicinal to Si(001). I. Diffusion of silicon adatoms over the terraces
Christopher Roland and George H. Gilmer
pp. 13428-13436 [View Page Images or PDF (1,577 kB)]
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Epitaxy on surfaces vicinal to Si(001). II. Growth properties of Si(001) steps
Christopher Roland and George H. Gilmer
pp. 13437-13451 [View Page Images or PDF (2,773 kB)]
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Response of excitonic absorption spectra to photoexcited carriers in GaAs quantum wells
D. R. Wake, H. W. Yoon, J. P. Wolfe, and H. Morkoç
pp. 13452-13460 [View Page Images or PDF (1,537 kB)]
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In-plane transport of photoexcited carriers in GaAs quantum wells
H. W. Yoon, D. R. Wake, J. P. Wolfe, and H. Morkoç
pp. 13461-13470 [View Page Images or PDF (1,730 kB)]
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Atomic structure, adsorbate ordering, and mode of growth of the K/Si(100)2×1 surface
P. Soukiassian, J. A. Kubby, P. Mangat, Z. Hurych, and K. M. Schirm
pp. 13471-13479 [View Page Images or PDF (1,886 kB)]

Surface physics, low-dimensional systems, and related topics

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Mass-spectrometric investigation of the stabilities and structures of Mn-O and Mn-Mg-O clusters
Paul J. Ziemann and A. W. Castleman, Jr.
pp. 13480-13486 [View Page Images or PDF (1,184 kB)]
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Surface patterns on single-crystal films under uniaxial stress: Experimental evidence for the Grinfeld instability
J. Berréhar, C. Caroli, C. Lapersonne-Meyer, and M. Schott
pp. 13487-13495 [View Page Images or PDF (1,821 kB)]
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Circular dichroism in x-ray photoemission from core levels of nonmagnetic species
J. Bansmann, Ch. Ostertag, G. Schönhense, F. Fegel, C. Westphal, M. Getzlaff, F. Schäfers, and H. Petersen
pp. 13496-13500 [View Page Images or PDF (771 kB)]
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Indirect exchange interaction in a thin film of rare-earth metals
Hao Che, D. L. Lin, Yu Xia, Hang Zheng, and H. X. Li
pp. 13501-13508 [View Page Images or PDF (1,049 kB)]
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Electronic pseudocharge model for the Cu(111) longitudinal-surface-phonon anomaly observed by helium-atom scattering
C. Kaden, P. Ruggerone, J. P. Toennies, G. Zhang, and G. Benedek
pp. 13509-13525 [View Page Images or PDF (3,098 kB)]
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Thermal-diffusivity measurements of ultrahigh thermal conductors with use of scanning photothermal rate-window spectrometry: Chemical-vapor-deposition diamonds
Zhuohui Chen and Andreas Mandelis
pp. 13526-13538 [View Page Images or PDF (1,990 kB)]
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Lifetime of image-potential states on metal surfaces
S. Schuppler, N. Fischer, Th. Fauster, and W. Steinmann
pp. 13539-13547 [View Page Images or PDF (1,711 kB)]
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Source-wave angular-momentum effects on electron-diffraction patterns
John J. Barton and Louis J. Terminello
pp. 13548-13552 [View Page Images or PDF (779 kB)]
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Rough interfaces in a bcc-based binary alloy
F. Schmid and K. Binder
pp. 13553-13564 [View Page Images or PDF (1,403 kB)]
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Monte Carlo investigation of interface roughening in a bcc-based binary alloy
F. Schmid and K. Binder
pp. 13565-13570 [View Page Images or PDF (759 kB)]
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Variable-takeoff-angle x-ray-photoelectron-spectroscopy evidence for an electronically modified surface in α-Pu
L. E. Cox, O. Eriksson, and B. R. Cooper
pp. 13571-13575 [View Page Images or PDF (765 kB)]
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Possibility of a δ-like surface for α-Pu: Theory
Olle Eriksson, L. E. Cox, B. R. Cooper, J. M. Wills, G. W. Fernando, Y. G. Hao, and A. M. Boring
pp. 13576-13583 [View Page Images or PDF (1,308 kB)]
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Polarizabilities, charge states, and vibrational modes of isolated fullerene molecules
Mark R. Pederson and Andrew A. Quong
pp. 13584-13591 [View Page Images or PDF (1,417 kB)]

BRIEF REPORTS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Electron thermalization in gold
W. S. Fann, R. Storz, H. W. K. Tom, and J. Bokor
pp. 13592-13595 [View Page Images or PDF (639 kB)]
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Numerical stabilization of the first-principles molecular-dynamics method for metals
Yusaku Yamamoto and Takeo Fujiwara
pp. 13596-13598 [View Page Images or PDF (402 kB)]
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Cohesive properties of iron obtained by use of the generalized gradient approximation
T. Asada and K. Terakura
pp. 13599-13602 [View Page Images or PDF (676 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Excitons in semiconductor superlattices: Heuristic description of the transfer between Wannier-like and Frenkel-like regimes
Pierre Lefebvre, Philippe Christol, and Henry Mathieu
pp. 13603-13606 [View Page Images or PDF (685 kB)]
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Anion-specific surface valence-band states in heteropolar semiconductors: The case of GaP(110) and InP(110)
M. Sancrotti, L. Duò, L. Calliari, F. Manghi, R. Cosso, and P. Weightman
pp. 13607-13610 [View Page Images or PDF (759 kB)]
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Direct measurement of the effective-mass renormalization in n-type modulation-doped Al0.23Ga0.77As/In0.08Ga0.92As/GaAs quantum wells
S. Adams, I. Galbraith, B. N. Murdin, K. W. Mitchell, B. C. Cavenett, C. R. Pidgeon, P. B. Kirby, R. S. Smith, and B. Miller
pp. 13611-13614 [View Page Images or PDF (630 kB)]

Surface physics, low-dimensional systems, and related topics

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Multiple-scattering effects in electron holographic images
P. Hu and D. A. King
pp. 13615-13618 [View Page Images or PDF (563 kB)]

COMMENTS

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Comment on ‘‘Continuum theories of optical phonons and polaritons in superlattices: A brief critique’’
Bang-fen -Zhu
pp. 13619-13623 [View Page Images or PDF (844 kB)]

RAPID COMMUNICATIONS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Photoemission near the Fermi energy in one dimension
Y. Hwu, P. Alméras, M. Marsi, H. Berger, F. Lévy, M. Grioni, D. Malterre, and G. Margaritondo
pp. 13624-13626 [View Page Images or PDF (402 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Direct observation of magnetoplasmon-phonon coupled modes in the magnetophotoluminescence spectra of the two-dimensional electron gas in InxGa1-xAs/GaAs quantum wells
L. V. Butov, V. I. Grinev, V. D. Kulakovskii, and T. G. Andersson
pp. 13627-13630 [View Page Images or PDF (608 kB)]
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Structural study of the Si–alkali-metal interface with x-ray standing waves
S. Lagomarsino, F. Scarinci, P. Castrucci, C. Giannini, E. Fontes, and J. R. Patel
pp. 13631-13634 [View Page Images or PDF (614 kB)]
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Comparison of the 3×1 reconstructions of the Si(111) surface induced by Li and Ag
K. J. Wan, X. F. Lin, and J. Nogami
pp. 13635-13638 [View Page Images or PDF (1,346 kB)]
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Effect of Landau-level mixing on quantum-liquid and solid states of two-dimensional hole systems
M. B. Santos, J. Jo, Y. W. Suen, L. W. Engel, and M. Shayegan
pp. 13639-13642 [View Page Images or PDF (723 kB)]

Surface physics, low-dimensional systems, and related topics

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Systematic trends in the normal enhancement of the phonon anharmonicity at the surface of metals
G. Benedek and J. P. Toennies
pp. 13643-13646 [View Page Images or PDF (675 kB)]
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Coulomb integrals and model Hamiltonians for C60
V. P. Antropov, O. Gunnarsson, and O. Jepsen
pp. 13647-13650 [View Page Images or PDF (814 kB)]
 
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