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PROLA » Phys. Rev. B » Volume 48 » Issue 24
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Physical Review B – 15 December 1993
Volume 48, Issue 24

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Transport in polyaniline near the critical regime of the metal-insulator transition
Reghu Menon, C. O. Yoon, D. Moses, A. J. Heeger, and Y. Cao
pp. 17685-17694 [View Page Images or PDF (1,638 kB)]
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Electronic structure and interatomic bonding of crystalline β-BaB2O4 with comparison to LiB3O5
Yong-Nian Xu, W. Y. Ching, and R. H. French
pp. 17695-17702 [View Page Images or PDF (1,430 kB)]
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Self-consistent spline augmented-plane-wave calculation: Ground-state properties of Cu
G. M. Fehrenbach and H. Bross
pp. 17703-17714 [View Page Images or PDF (2,185 kB)]
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Thermally stimulated depolarization phenomena in LiF:Ca2+ crystals
A. N. Papathanssiou, J. Grammatikakis, and N. G. Bogris
pp. 17715-17723 [View Page Images or PDF (1,670 kB)]
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Generalized augmented-space theorem for correlated disorder and the cluster-coherent-potential approximation
Abhijit Mookerjee and Rajendra Prasad
pp. 17724-17731 [View Page Images or PDF (1,033 kB)]

Semiconductors I: bulk

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Electronic density of states of a disordered tetrahedrally bonded semiconductor
T. M. Hayes and J. L. Beeby
pp. 17732-17743 [View Page Images or PDF (2,126 kB)]
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Electric-dipole echo in microwave hopping conductivity of semiconductors
V. L. Gurevich, M. I. Muradov, and D. A. Parshin
pp. 17744-17751 [View Page Images or PDF (1,195 kB)]
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Multiple-scattering corrections in diluted magnetic semiconductors: A plane-wave expansion
D. Scalbert, A. Ghazali, and C. Benoit à la Guillaume
pp. 17752-17757 [View Page Images or PDF (851 kB)]
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Kinetics of luminescence of isoelectronic rare-earth ions in III-V semiconductors
H. J. Lozykowski
pp. 17758-17769 [View Page Images or PDF (2,340 kB)]
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Effect of d electrons in transition-metal ions on band-gap energies of diluted magnetic semiconductors
Y. D. Kim, Yia-Chung Chang, and M. V. Klein
pp. 17770-17775 [View Page Images or PDF (1,139 kB)]
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Experimental study of the hydrogen complexes in indium phosphide
R. Darwich, B. Pajot, B. Rose, D. Robein, B. Theys, R. Rahbi, C. Porte, and F. Gendron
pp. 17776-17790 [View Page Images or PDF (2,468 kB)]
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Quasiparticle band-structure calculations for C, Si, Ge, GaAs, and SiC using Gaussian-orbital basis sets
Michael Rohlfing, Peter Krüger, and Johannes Pollmann
pp. 17791-17805 [View Page Images or PDF (2,525 kB)]
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Role played by N and N-N impurities in type-IV semiconductors
C. Cunha, S. Canuto, and A. Fazzio
pp. 17806-17810 [View Page Images or PDF (949 kB)]
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Various appearances of Rabi oscillations for 2π-pulse excitation in a semiconductor
Th. Östreich and A. Knorr
pp. 17811-17817 [View Page Images or PDF (1,256 kB)]
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Spectral-hole burning and carrier thermalization in GaAs at room temperature
S. Hunsche, H. Heesel, A. Ewertz, H. Kurz, and J. H. Collet
pp. 17818-17826 [View Page Images or PDF (1,700 kB)]
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Column-V acceptors in ZnSe
K. W. Kwak, R. D. King-Smith, and David Vanderbilt
pp. 17827-17834 [View Page Images or PDF (1,652 kB)]
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Low-temperature occupation of a donor state resonant with the conduction band in Al0.35Ga0.65As
A. Baraldi, F. Colonna, P. Frigeri, C. Ghezzi, A. Parisini, E. Gombia, and R. Mosca
pp. 17835-17840 [View Page Images or PDF (1,032 kB)]
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Electronic structure and equilibrium properties of GaxAl1-xN alloys
E. A. Albanesi, W. R. L. Lambrecht, and B. Segall
pp. 17841-17847 [View Page Images or PDF (1,214 kB)]
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Transport properties of Hg1-xZnxSe and Hg1-xMnxSe doped with Fe resonant donors
W. Dobrowolski, R. R. Gal/a̧zka, E. Grodzicka, J. Kossut, and B. Witkowska
pp. 17848-17860 [View Page Images or PDF (2,157 kB)]
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Magnetopolaron effect in one-phonon resonant Raman scattering from bulk semiconductors: Deformation potential
V. I. Belitsky, C. Trallero-Giner, and M. Cardona
pp. 17861-17866 [View Page Images or PDF (974 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Formation of the Ho/CdSe(101¯0) interface
S. L. Molodtsov, M. Prietsch, C. Laubschat, G. Kaindl, A. V. Fedorov, and V. K. Adamchuk
pp. 17867-17871 [View Page Images or PDF (972 kB)]
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Structure of siloxene and layered polysilane (Si6H6)
J. R. Dahn, B. M. Way, E. Fuller, and J. S. Tse
pp. 17872-17877 [View Page Images or PDF (973 kB)]
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Electron-spin-resonance studies of donors in wurtzite GaN
W. E. Carlos, J. A. Freitas, Jr., M. Asif Khan, D. T. Olson, and J. N. Kuznia
pp. 17878-17884 [View Page Images or PDF (1,197 kB)]
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Optical and transport properties of piezoelectric [111]-oriented strained Ga1-xInxSb/GaSb quantum wells
S. L. Wong, R. W. Martin, M. Lakrimi, R. J. Nicholas, T-Y. Seong, N. J. Mason, and P. J. Walker
pp. 17885-17891 [View Page Images or PDF (1,100 kB)]
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Topographic and spectroscopic analysis of ethylene adsorption on Si(111)7×7 by STM and STS
M. N. Piancastelli, N. Motta, A. Sgarlata, A. Balzarotti, and M. De Crescenzi
pp. 17892-17896 [View Page Images or PDF (1,532 kB)]
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Edge-channel transport in the presence of a lateral concentration gradient in the two-dimensional electron gas
R. J. F. van Haren, R. T. H. Maessen, F. A. P. Blom, and J. H. Wolter
pp. 17897-17901 [View Page Images or PDF (811 kB)]
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Femtosecond-pulse distortion in quantum wells
Dai-Sik Kim, Jagdeep Shah, D. A. B. Miller, T. C. Damen, Wilfred Schäfer, and L. Pfeiffer
pp. 17902-17905 [View Page Images or PDF (745 kB)]
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Subband optical absorption in lateral-surface superlattices under normally applied electric fields
Hong Sun
pp. 17906-17912 [View Page Images or PDF (1,123 kB)]
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Br2 and Cl2 adsorption and etching of GaAs(110) studied by use of scanning tunneling microscopy
J. C. Patrin and J. H. Weaver
pp. 17913-17921 [View Page Images or PDF (3,215 kB)]
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Fluctuation spectrum of the electron states in a two-dimensional system with a Gaussian potential and a transverse magnetic field
M. Zusman, Y. Avishai, and S. A. Gredeskul
pp. 17922-17925 [View Page Images or PDF (726 kB)]
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Transport properties of the ν=1/2 state in bilayer systems
D. Schmeltzer
pp. 17926-17932 [View Page Images or PDF (743 kB)]
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Spin-splitting renormalization in the neutral dense magnetoplasma in InxGa1-xAs/InP quantum wells
L. V. Butov, V. D. Kulakovskii, and A. Forchel
pp. 17933-17937 [View Page Images or PDF (791 kB)]
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Effect of strain on phonons in Si, Ge, and Si/Ge heterostructures
Zhifeng Sui and Irving P. Herman
pp. 17938-17953 [View Page Images or PDF (2,245 kB)]
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Nitrogen doping of highly tetrahedral amorphous carbon
V. S. Veerasamy, J. Yuan, G. A. J. Amaratunga, W. I. Milne, K. W. R. Gilkes, M. Weiler, and L. M. Brown
pp. 17954-17959 [View Page Images or PDF (1,173 kB)]
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Intrinsic electron mobility in narrow Ga0.47In0.53As quantum wells
Sanghamitra Mukhopadhyay and B. R. Nag
pp. 17960-17966 [View Page Images or PDF (1,080 kB)]
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X-ray diffraction from a coherently illuminated Si(001) grating surface
Qun Shen, C. C. Umbach, B. Weselak, and J. M. Blakely
pp. 17967-17971 [View Page Images or PDF (1,264 kB)]
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Evidence of a long-range density gradient in SiO2 films on Si from H2-permeability measurements
B. J. Mrstik and P. J. McMarr
pp. 17972-17985 [View Page Images or PDF (2,547 kB)]
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Effect of reverse-bias annealing and zero-bias annealing on a hydrogen-containing Au/(n-type GaAs) Schottky barrier
M. H. Yuan, H. Z. Song, S. X. Jin, H. P. Wang, Y. P. Qiao, and G. G. Qin
pp. 17986-17994 [View Page Images or PDF (1,656 kB)]
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Motion of a particle with an arbitrary dispersion relation in a high-frequency oscillating field
Y. O. Averkov, F. G. Bass, A. P. Panchekha, and O. M. Yevtushenko
pp. 17995-18001 [View Page Images or PDF (1,148 kB)]
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Effects of a magnetic field on electron-phonon scattering in quantum wires
N. Telang and S. Bandyopadhyay
pp. 18002-18009 [View Page Images or PDF (1,142 kB)]
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Observation of many-body effects and band-gap renormalization in low-dimensional systems with built-in piezoelectric fields
Karen J. Moore, Philippe Boring, Bernard Gil, and Karl Woodbridge
pp. 18010-18015 [View Page Images or PDF (929 kB)]
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Quasi-Landau-level structure in the fractional quantum Hall effect
B. Rejaei
pp. 18016-18023 [View Page Images or PDF (1,194 kB)]
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Confinement and zone folding in the E1-like optical transitions of Ge/Si quantum wells and superlattices
P. A. M. Rodrigues, M. A. Araújo Silva, F. Cerdeira, and J. C. Bean
pp. 18024-18030 [View Page Images or PDF (1,161 kB)]
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Direct determination of the band discontinuities in InxGa1-xP/InyAl1-yP multiple quantum wells
D. Patel, M. J. Hafich, G. Y. Robinson, and C. S. Menoni
pp. 18031-18036 [View Page Images or PDF (1,100 kB)]
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Effects of boundary conditions on confined optical phonons in semiconductor nanostructures
P. A. Knipp and T. L. Reinecke
pp. 18037-18042 [View Page Images or PDF (1,145 kB)]
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Magnetic-field dependence of defect tunneling in a mesoscopic metal
M. Faas and B. L. Altshuler
pp. 18043-18050 [View Page Images or PDF (1,095 kB)]
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Pair description of the fractional quantum Hall effect with application to edge waves
M. Marsili
pp. 18051-18059 [View Page Images or PDF (1,513 kB)]
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Transport properties between quantum Hall plateaus
Dmitri B. Chklovskii and Patrick A. Lee
pp. 18060-18078 [View Page Images or PDF (3,466 kB)]
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Angle-resolved photoemission from a GaAs(1¯1¯1¯)-2×2 surface: Normal emission study
Y. Q. Cai, J. D. Riley, R. C. G. Leckey, J. Faul, and L. Ley
pp. 18079-18087 [View Page Images or PDF (1,593 kB)]
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Magneto-oscillatory phenomena in double quantum wells with asymmetric scattering. I. Density of states and thermodynamic quantities
F. T. Vasko and P. Vasilopoulos
pp. 18088-18094 [View Page Images or PDF (972 kB)]
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Magneto-oscillatory phenomena in double quantum wells with asymmetric scattering. II. Longitudinal transport coefficients
F. T. Vasko and P. Vasilopoulos
pp. 18095-18100 [View Page Images or PDF (783 kB)]
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Quasikinematic low-energy electron-diffraction surface crystallography
J. F. Jia, R. G. Zhao, and W. S. Yang
pp. 18101-18108 [View Page Images or PDF (1,295 kB)]
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Atomic structure of the Si(111)(√3 × √3 )R30°-Ag surface
J. F. Jia, R. G. Zhao, and W. S. Yang
pp. 18109-18113 [View Page Images or PDF (825 kB)]

Surface physics, low-dimensional systems, and related topics

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Phase-matched second-harmonic generation in planar waveguides
G. Marowsky, E. J. Canto-Said, S. Lehmann, F. Sieverdes, and A. Bratz
pp. 18114-18118 [View Page Images or PDF (866 kB)]
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Reconstruction of the Pt(111) surface: X-ray-scattering measurements
G. Grübel, K. G. Huang, Doon Gibbs, D. M. Zehner, A. R. Sandy, and S. G. J. Mochrie
pp. 18119-18139 [View Page Images or PDF (3,999 kB)]
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Theory of friction and boundary lubrication
B. N. J. Persson
pp. 18140-18158 [View Page Images or PDF (3,158 kB)]
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Adsorption of a monolayer of iron on β-SiC(100) surfaces
Wenchang Lu, Kaiming Zhang, and Xide Xie
pp. 18159-18163 [View Page Images or PDF (832 kB)]
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Shell structure in faceted metal clusters
Nicolas Pavloff and Stephen C. Creagh
pp. 18164-18173 [View Page Images or PDF (1,787 kB)]
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de Haas–van Alphen effect of stage-1 CdCl2 intercalated graphite
W. R. Datars, P. K. Ummat, H. Aoki, and S. Uji
pp. 18174-18177 [View Page Images or PDF (509 kB)]
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Width of cluster plasmon resonances: Bulk dielectric functions and chemical interface damping
H. Hövel, S. Fritz, A. Hilger, U. Kreibig, and M. Vollmer
pp. 18178-18188 [View Page Images or PDF (2,070 kB)]
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Stability, reconstruction, and electronic properties of diamond (100) and (111) surfaces
Th. Frauenheim, U. Stephan, P. Blaudeck, D. Porezag, H.-G. Busmann, W. Zimmermann-Edling, and S. Lauer
pp. 18189-18202 [View Page Images or PDF (3,092 kB)]
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Coherent islands and microstructural evolution
Jeff Drucker
pp. 18203-18206 [View Page Images or PDF (732 kB)]
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Two-plasmon excitations in metallic clusters
F. Catara, Ph. Chomaz, and N. Van Giai
pp. 18207-18213 [View Page Images or PDF (1,087 kB)]
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Wetting transitions of classical liquid films: A nearly universal trend
E. Cheng, M. W. Cole, W. F. Saam, and J. Treiner
pp. 18214-18221 [View Page Images or PDF (1,127 kB)]
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Dielectric screening effects on the photoabsorption cross section of embedded metallic clusters
Angel Rubio and Llorenç Serra
pp. 18222-18229 [View Page Images or PDF (1,445 kB)]
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Fragmentation of C60 and C70 clusters
Eunja Kim, Young Hee Lee, and Jae Young Lee
pp. 18230-18234 [View Page Images or PDF (2,661 kB)]
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Disintegration of C60 by heavy-ion irradiation
R. Kalish, A. Samoiloff, A. Hoffman, C. Uzan-Saguy, D. McCulloch, and S. Prawer
pp. 18235-18238 [View Page Images or PDF (619 kB)]
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Collective excitations in metallic graphene tubules
P. Longe and S. M. Bose
pp. 18239-18243 [View Page Images or PDF (800 kB)]
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Determination of the orientation of C60 adsorbed on Au(111) and Ag(111)
Eric I. Altman and Richard J. Colton
pp. 18244-18249 [View Page Images or PDF (2,105 kB)]
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Magneto-optical studies of photoexcitations in C61
J. M. Leng, X. Wei, Z. V. Vardeny, K. C. Khemani, D. Moses, and F. Wudl
pp. 18250-18253 [View Page Images or PDF (720 kB)]

BRIEF REPORTS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Uniform electron gas for transition metals: Input parameters
James H. Rose and Herbert B. Shore
pp. 18254-18256 [View Page Images or PDF (473 kB)]

Semiconductors I: bulk

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Si K x-ray-absorption spectra of single-crystal Si and amorphous SiO2
Naoyuki Nagashima, Asao Nakano, Kiyoshi Ogata, Masashi Tamura, Katsuro Sugawara, and Kazunobu Hayakawa
pp. 18257-18260 [View Page Images or PDF (631 kB)]
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Influence of donor-triad molecules on the optical properties of semiconductors
Sylvio Canuto and A. Ferreira da Silva
pp. 18261-18263 [View Page Images or PDF (409 kB)]
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Ab initio calculations of the electronic structure of the wurtzite compounds CdS and CdSe
Peter Schröer, Peter Krüger, and Johannes Pollmann
pp. 18264-18267 [View Page Images or PDF (760 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Lattice scattering of a two-dimensional electron gas at low temperatures
S. S. Paul, A. K. Ghorai, and D. P. Bhattacharya
pp. 18268-18271 [View Page Images or PDF (642 kB)]
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Competing spin exchange interactions in Zn1-xMnxSe/Zn1-yFeySe multiple-quantum-well structures
L. P. Fu, W. Y. Yu, A. Petrou, J. Warnock, and B. T. Jonker
pp. 18272-18275 [View Page Images or PDF (584 kB)]
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Line-shape model for broad photoluminescence band from Si1-xGex/Si heterostructures
A. Hartmann, L. Vescan, C. Dieker, T. Stoica, and H. Lüth
pp. 18276-18279 [View Page Images or PDF (971 kB)]
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Collective excitations in quasi-one-dimensional electron systems under a magnetic field
B. Tanatar and N. C. Constantinou
pp. 18280-18283 [View Page Images or PDF (732 kB)]

Surface physics, low-dimensional systems, and related topics

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Surface segregation in Cu-Ni alloys
Brian Good, Guillermo Bozzolo, and John Ferrante
pp. 18284-18287 [View Page Images or PDF (715 kB)]
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Diffusion mechanisms of dimers adsorbed on periodic substrates
Ruoping Wang and Kristen A. Fichthorn
pp. 18288-18291 [View Page Images or PDF (770 kB)]
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Calculation of ion-scattering yields from simulated intermetallic surfaces: Ni-Al(110)
V. Shutthanandan, Adli A. Saleh, A. W. Denier van der Gon, and R. J. Smith
pp. 18292-18295 [View Page Images or PDF (725 kB)]
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Auger and photoelectron study of the Hubbard U in C60, K3C60, and K6C60
P. A. Brühwiler, A. J. Maxwell, A. Nilsson, N. Mårtensson, and O. Gunnarsson
pp. 18296-18299 [View Page Images or PDF (846 kB)]

RAPID COMMUNICATIONS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Electronic properties of the ordered delafossite-type superoxides YCuO2+δ
L. F. Mattheiss
pp. 18300-18303 [View Page Images or PDF (691 kB)]
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Full-potential calculations using the generalized gradient approximation: Structural properties of transition metals
V. Ozoliņš and M. Körling
pp. 18304-18307 [View Page Images or PDF (647 kB)]

Semiconductors I: bulk

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Diffusivity of positively charged hydrogen in GaAs
N. M. Johnson, C. Herring, and D. Bour
pp. 18308-18311 [View Page Images or PDF (655 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Doublet structure of emission spectra from fractional quantum Hall states
Vadim M. Apalkov and Emmanuel I. Rashba
pp. 18312-18315 [View Page Images or PDF (652 kB)]
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Effect of environmental noise on the accuracy of Coulomb-blockade devices
John M. Martinis and M. Nahum
pp. 18316-18319 [View Page Images or PDF (742 kB)]
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Nonequilibrium effect in an electron turnstile
Chiu Liu and Qian Niu
pp. 18320-18323 [View Page Images or PDF (734 kB)]
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Ballistic-electron-emission microscopy of electron transport through AlAs/GaAs heterostructures
W. J. Kaiser, M. H. Hecht, L. D. Bell, F. J. Grunthaner, J. K. Liu, and L. C. Davis
pp. 18324-18327 [View Page Images or PDF (786 kB)]
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Many-body effects in the electromodulation spectra of modulation-doped quantum wells: Theory and experiment
Godfrey Gumbs, Danhong Huang, Yichun Yin, H. Qiang, D. Yan, Fred H. Pollak, and Thomas F. Noble
pp. 18328-18331 [View Page Images or PDF (809 kB)]
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Formation of surface F centers on CaF2/Si(111)
V. Chakarian, T. D. Durbin, P. R. Varekamp, and J. A. Yarmoff
pp. 18332-18335 [View Page Images or PDF (793 kB)]
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Carrier-carrier scattering: An experimental comparison of bulk GaAs and GaAs/AlxGa1-xAs quantum wells
J. A. Kash
pp. 18336-18339 [View Page Images or PDF (811 kB)]
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Coulomb oscillation amplitudes and semiconductor quantum-dot self-consistent level structure
M. Stopa
pp. 18340-18343 [View Page Images or PDF (860 kB)]

Surface physics, low-dimensional systems, and related topics

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Evidence for martensitic fcc-bcc transition of thin Fe films on Cu(100)
K. Kalki, D. D. Chambliss, K. E. Johnson, R. J. Wilson, and S. Chiang
pp. 18344-18347 [View Page Images or PDF (1,339 kB)]
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High-resolution electron-energy-loss spectroscopic study of epitaxially grown diamond (111) and (100) surfaces
Takashi Aizawa, Toshihiro Ando, Mutsukazu Kamo, and Yoichiro Sato
pp. 18348-18351 [View Page Images or PDF (623 kB)]
 
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